STUDY ON LOW TEMPERATURE FORMATION OF VERY THIN AND HIGH-QUALITY Si-BASED INSULATING FILMS AND ITS FUNCTIONAL EVALUATION

本研究的目的是建立一种利用电子回旋共振等离子体在低温下制备超薄高质量硅基绝缘膜的技术，并探索其功能性。主要研究结果如下：1.建立了在130 ℃低温下击穿场强为0110 MV/cm的SiO_2薄膜的制备工艺，成功地制备出了厚度为9 nm的超薄SiO_2薄膜，其击穿特性为：界面态密度小于10 × 10 ~（-1）<1I>cm ~（-1）<-2>eV <-1>~（-1），固定电荷小于10 × 10 ~（-1）<1I>cm ~（<-2>-1）。通过优化氧氮混合气体的等离子体，我们成功地制备了击穿电压为13 MV/cm的锡永薄膜。4.采用磁控型ECR等离子体在室温下沉积了致密的SiN薄膜。SiN薄膜的折射率、化学腐蚀速率、红外特性与900 ℃ CVD沉积的薄膜基本相同。

This research aimed to establish techniques for fabricating very thin and high quality Si-based insulating films at low temperature by using sputtering-type ECR plasma and to find the functionality of the deposited films, The results are summarized as follows :1.we have established the deposition techniques of SiO_2 having breakdown field 0110 MV/cm at low temperature of 130ﾟC2.We have succeeded in the fabrication of very thin SiO_2 having a thickness of 9 nm which showed high breakdown characteristics of 9 MV/cm interface state densities of less than 1CHIl0^<1I>cm^<-2>eV^<-1>, and fixed charge of less than 1CHIl0^<1I>cm^<-2>.3.We have succeeded in the fabrication of SiON films having breakdown characteristics of 13 MV/cm at low temperature of 130ﾟC by optimizing the plasma from mixture gases of oxygen and nitrogen.4.Dense SiN film was deposited by using sputtering-type ECR plasma at room temperature. The refractive index, chemical etching rate, IR characteristics of the SiN films had almost the same as that deposited by CVD at 900 ﾟC.