Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals

这项研究涉及原子和电子 四面体配位化合物半导体性质 表面及其与金属的界面。 技术先进的埃 通过分子束外延生长的重要（100）表面将 除了II-VI纤锌矿表面外，还研究了其他材料。 这项工作将 重点是深入研究光电子诱导 表面光电压及其对有效性的影响 目前肖特基势垒模型除了结构 （100）接口的特性。 镓的研究 锑化物表面及其界面具有广泛的 金属. 在成功确定原子 （1120）和（1010）纤锌矿型硒化镉结构， 硫化物的研究将开始其界面， 完全反应性的物质，例如锑和铋。 的 目标是识别原子有序和突变模型 接口，可用于实验和理论 对覆盖层电子结构的作用的研究， 界面键合、悬空键和局部缺陷 在这些化合物上形成肖特基势垒。

This research is concerned with the atomic and electronic properties of tetrahedrally coordinated compound semiconductor surfaces and their interfaces with metals. The technologically important (100) surfaces grown by molecular beam epitaxy will be studied in addition to II-VI wurtzite surfaces. The work will focus on an in depth investigation of photoemission induced surface photovoltage and its implications on the validity of the present Schottky barrier models in addition to the structural characteristics of (100) interfaces. The study of gallium antimonide surfaces and their interfaces with a wide range of metals. Following the successful determination of the atomic structure of (1120) and (1010) wurtzite cadmium selenide and sulfide studies will be initiated of their interfaces with totally reactive species such as antimony and bismuth. The objective is to identify atomically ordered and abrupt model interfaces which can be employed in experimental and theoretical studies of the role of the overlayer electronic structure, interface bonding, dangling bonds and local defects in the formation of Schottky barriers on these compounds.