The Molecular Kinetics of the Organometallic Vapor-Phase Epitaxy of II-VI Materials

镉的沉积机理和动力学 二甲基镉分解产生的碲化物， 二乙基碲测定。 初步结果表明 该沉积通过催化反应发生，该催化反应包括： 有机金属分子在烷基上的吸附 组 在这项研究中，吸附的基本动力学 二甲基镉和二乙基碲的分解 (2x8)砷化镓（100）在100 ℃下测定， 真空。 内反射红外光谱和X射线 光电子能谱鉴定吸附的物质， 测量它们的表面覆盖率。 程序升温 解吸用于表征分解动力学。 动力学参数可用，并将其纳入 转化为适合设计的数学模型， 有机金属气相的优化和控制 外延（OMVPE）反应器。 该项目提供了工艺所需的基础数据 OMVPE反应器模型，并开始开发 这些模型。 OMPVE是一种非常有前途的技术， 制备化合物半导体的层状结构， 形成这种电子和光子器件的有源区 作为高速场效应晶体管，发光二极管， 固态激光器、红外探测器和太阳能电池。

The mechanism and kinetics of the deposition of cadmium telluride from the decomposition of dimethylcadmium and diethyltellurium are determined. Preliminary results indicate that deposition occurs by a catalytic reaction consisting of the adsorption of the organometallic molecules on the alkyl groups. In this study, the elementary kinetics of adsorption and decomposition of dimethylcadmium and diethyl tellurium on (2x8) gallium arsenide (100) are determined in ultrahigh vacuum. Internal-reflection infrared spectroscopy and X-ray photoelectron spectroscopy identify the adsorbed species and measure their surface coverages. Temperature-programmed desorption is used to characterize the decomposition kinetics. A kinetic parameters become available, they are incorporated into mathematical models suitable for the design, optimization, and control of organometallic vapor-phase epitaxy (OMVPE) reactors. This project provides the fundamental data needed for process and reactor models of OMVPE, and makes a start on developing these models. OMPVE is a very promising technology for producing layered structures of compound semiconductors, which form the active region of such electronic and photonic devices as high-speed field-effect transistors, light-emitting diodes, solid-state lasers, infrared detectors, and solar cells.