GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications

发射波长为？= 1.33或1.55 μ m是当前现代信息技术时代光纤通信系统中最重要和最广泛使用的光电器件之一。对于光纤通信，与InP晶格匹配的InGaAsP四元III-V族半导体材料系统覆盖了对应于光纤中的低色散或低衰减的波长范围。因此，使用生长在InP衬底上的InGaAsP有源层，已经开发并商业化了具有低色散或低衰减的用于光通信应用的激光器。然而，与GaAs基激光器相比，InP基激光器通常具有较差的特性性能。特别是对于垂直腔面发射激光器（VCSEL），InP基激光器由于缺乏良好的晶格匹配的分布式布拉格反射器（DBR）材料组合而存在问题，所述DBR材料组合应当具有高折射率对比度、低电阻和低热阻。与InP基VCSEL相比，采用AlAs/GaAs DBR反射镜的GaAs基VCSEL具有更好的特性。然而，由于兼容多模光纤具有短波长光谱范围（λ ~ λ），系统性能特性（例如传输容量）受到兼容多模光纤带宽的限制。为了获得高性能的长波长激光器，理想的实际组合应该是在长波长范围内发射的有源层与成熟的GaAs基激光器技术兼容。GaAs系统提供了几个重要的优势，包括更大面积的晶圆处理，更好的热性能更高的掺杂浓度，氧化兼容的材料系统，和高性能的DBR材料。已经提出并研究了几种可能的方法。本文探讨了其中最有前途的一种方法，即MOCVD法生长InAlGaAsSb外延材料的研究，这是一个国际上越来越感兴趣的研究课题。高质量外延层和异质结的实现是先进半导体器件（特别是VCSELS）发展的重要因素。这里提出的研究将导致X=1.33pm VCSEL的实际实现，以及Sb基异质结的基本性质的研究和III-Sb量子点的研究。Sb生长和基本性质研究的主要课题的工作直接耦合到设备上的第二个研究课题，特别是VCSEL-我们已经在与安捷伦科技公司的合作者探索的一个领域。这项研究将为III-Sb材料中二维受限系统的物理学提供新的基本见解。这些主题在光电子学和电子学中具有广泛影响的强大潜力，例如。可以开发高速电子设备。

Long-wavelength lasers emitting at ?= 1.33 or 1.55 m are one of the most important and widely used optoelectronic devices for optical fiber communication systems in the present modern information technology era. For optical-fiber communications, the lnGaAsP quaternary III-V semiconductor material system, which is lattice-matched to InP, covers the wavelength range corresponding to low dispersion or low attenuation in optical fibers. Therefore, lasers for optical communication application with low dispersion or low attenuation have been developed and commercialized using an InGaAsP active layer grown on InP substrates. However, InP-based lasers have generally inferior characteristic performance compared to GaAs-based lasers. Especially for vertical-cavity surface-emitting lasers (VCSELs), lnP -based lasers have been problematic due to the lack of good lattice-matched distributed Bragg reflector (DBR) material combinations, which should have high refractive index contrast, low electrical resistance, and low thermal resistance. Compared to lnP-based VCSELs, GaAs-based VCSELs with AlAs/GaAs DBR mirrors have better characteristics. However, the system performance characteristics, such as the transmission capacity, are limited by the bandwidth of compatible multimode fibers, since they have a short-wavelength spectral range (?~O.85 m).To obtain high-performance long-wavelength lasers, the ideal practical combination should be that of an ~active layer" emitting in the long-wavelength range compatible with the well-established GaAs-based laser technologies. The GaAs system offers several important advantages over the alternate InP-based system, including larger area wafer processing, better thermal properties higher doping concentrations, an oxidation-compatible material system, and high-performance DBR materials. Several possible approaches have been proposed and investigated. One of the most promising is explored here.The study of InAlGaAsSb epitaxial growth using MOCVD is a research topic that is of increasing interest throughout the world. The realization of high-quality epitaxial layers and heterojunctions are important elements in the development of advanced semiconductor devices, in particular, VCSELS. The research proposed here will result in the practical realization of X=1.33pm VCSELs as well as for the study of the fundamental properties of Sb-based heterojunctions and in the study of Ill-Sb quantum dots. The work of the primary topic of the study of Sb growth and fundamental properties couples directly to that of a second research topic on devices, specifically, VCSELs-an area that we are already exploring with collaborators at Agilent Technologies. This research will provide new fundamental insight into the physics of two-dimensionally confined systems in Ill-Sb materials. These topics have a strong potential for broad impact in optoelectronics and also in electronics, e.g.. high-speed electronics could be developed.