Charge Transport and Storage in Nanoscaled Nonvolatile Semiconductor Memory (NVSM) SONOS Devices

我们建议研究超薄的氧化物-氮化物-氧化物(ONO)异质绝缘纳米结构中的电荷输运和存储，这种纳米结构在高密度、低功率、低电压、非易失性半导体存储器(NVSM)中得到应用。特别是，我们将研究一种新型的SONOS器件，称为NROMTM结构，它是用热电子注入进行编程的，能够在器件的源区和漏区存储空间隔离的2比特信息。此外，这些位中的每一个都具有多级存储的可能性，从而为超高密度NVSM打开了可能性。对器件物理、超薄氧化物的技术和潜在应用的研究也与低功耗CMOS电路的发展相关，因此我们的研究将包括采用全耗尽绝缘体上硅(FDSOI)CMOS技术制造的实验性纳米SONOS器件。半导体-绝缘体-栅界面处和块状绝缘体中陷阱的表征是预测纳米级半导体器件(如SONOS NVSM)性能和可靠性的重要因素。我们的研究计划将调查纳米级Sonos NVSM的基本限制。这一提议的智力价值在于这样一种愿景，即非易失性半导体存储器存储的未来进步将在纳米级的科学和工程中发挥核心作用。我们的项目将研究和教育结合起来，探索具有独特异质绝缘结构的高密度NVSM。新设备的实验和理论研究将需要在纳米尺度上使用物理、化学、材料科学和设备电子学，并有相当大的机会通过产生新知识来探索新的领域。我们计划中更广泛的方面将促进纳米电子劳动力的多样性，并提供智力技术转让、研究和教育的整合，以及促进伙伴关系。我们有出色的教育和推广计划，以增加纳米电子领域的多样性，特别是半导体设备。这是维持美国在全球经济中领导地位的一个重要领域。这一研究计划为学生研究和教育、少数族裔学生的推广以及与产业界的合作提供了一个极好的工具。

We propose to study charge transport and storage in ultra-thin, oxide-nitride-oxide (ONO) heteroinsulator nanostructures, which find application in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSMs). In particular, we will examine a new type of SONOS device called a NROMTM structure, which is programmed with hot electron injection and is able to store 2 bits of information spatially isolated over source and drain regions of the device. In addition, each of these bits has the possibility of multi-level storage opening the possibility for ultra-high density NVSMs. The study of device physics, the technology and potential applications of ultra-thin oxides are also relevant to the thrust into low-power CMOS circuits so our study will encompass experimental nanoscaled SONOS devices fabricated with fully-depleted silicon on insulator (FDSOI) CMOS technology. Characterization of traps at the semiconductor-insulator-gate interfaces and in the bulk insulator is an essential factor in predicting the performance and reliability of nanoscaled semiconductor devices, such as SONOS NVSMs. Our research program will investigate the fundamental limitations in nanoscaled SONOS NVSMs. The intellectual merit of this proposal resides in a vision where future advancements in nonvolatile semiconductor memory storage will play a central role in nanoscaled science and engineering. Our program integrates research and education to explore high-density NVSMs with unique heteroinsulator structures. The experimental and theoretical study of novel devices will entail the use of physics, chemistry, materials science and device electronics at the nanoscale with considerable opportunity to explore new frontiers through the generation of new knowledge. The broader aspects in our program will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, and promotion of partnerships. We have excellent educational and outreach programs to increase diversity with opportunities in nanoelectronics, especially semiconductor devices . an important area to maintain US leadership in a global economy. This research program provides an excellent vehicle for student research and education, minority student outreach and partnerships with industry.