NIRT: Semiconductor Nanowire Electronics

NIRT: Semiconductor Nanowire ElectronicsPI: J.M. redwin目的本NIRT提案重点研究基于第四组（Si, Ge, SixGe1-x）半导体纳米线的器件的物理和制造的基本问题。研究的重点是两种特定的器件类型：场效应晶体管和轴向p-n同质结二极管，它们将被用作诊断结构来研究器件性能的缩放效应。该研究将器件建模和仿真与详细的实验研究紧密结合起来，以提取纳米线器件中的载流子迁移率和耗尽效应。这种能力将用于研究散射机制以及取向、表面、界面和杂质对低场条件下纳米线场效应器件中载流子迁移率的影响，并探测随着线直径的缩小，从体向一维行为的转变。类似的研究将探讨轴向p-n均结中导线直径减小时二极管特性的变化。合成实验将与纳米尺度表征工具相结合，以检查纳米线生长和加工的尺寸相关影响。更广泛的影响预计研究结果将广泛适用于缩放Si CMOS技术和快速兴起的纳米线器件领域。潜在的影响领域包括下一代逻辑器件、高速晶体管、共振隧道器件、化学和生物传感器以及用于太阳能和热能转换的器件。英特尔公司计划开展一个工业实习项目，为从事该项目的研究生提供第一手接触纳米技术实施中的制造和开发问题的机会。本科生将通过REU网站和宾夕法尼亚州立大学针对女性和少数民族学生的特别项目参与该项目。将为初高中女生制定一个持续的指导计划，提供实践研讨会、实地考察和职业探索活动，旨在建立对数学和科学的信心，并接触科学和技术职业。

NIRT: Semiconductor Nanowire ElectronicsPI: J.M. RedwingObjective This NIRT proposal focuses on an investigation of fundamental issues in the physics and fabrication of group IV (Si, Ge, SixGe1-x) semiconductor nanowire-based devices. The studies focus on two specific device types: field-effect transistors and axial p-n homojunction diodes which will be used as diagnostic structures to study scaling effects on device performance. Intellectual MeritThe research tightly couples device modeling and simulation with detailed experimental studies to extract carrier mobility and depletion effects in nanowire devices. This capability will be used to study scattering mechanisms and the effects of orientation, surfaces, interfaces and impurities on carrier mobility in nanowire field-effect devices in the low-field regime and probe the transition from bulk to 1D behavior as the wire diameter is scaled down. Similar studies will investigate changes in diode properties with decreasing wire diameter in axial p-n homojunctions. Synthesis experiments will be combined with nanoscale characterization tools to examine size-related effects on nanowire growth and processing. Broader ImpactThe research results are anticipated to be broadly applicable both to scaled Si CMOS technology and the rapidly emerging field of nanowire-based devices. Potential areas of impact include future generation logic devices, high speed transistors, resonant tunneling devices, chemical and biological sensors and devices for solar and thermal energy conversion. An industrial internship program is planned with Intel Corporation to provide graduate students working on the project with the opportunity to gain firsthand exposure to manufacturing and development issues in nanotechnology implementation. Undergraduates will participate in the program through REU sites and special programs at Penn State targeted at female and minority students. A sustained mentoring program for middle school/high school girls will be developed providing hands-on workshops, field trips and career exploration activities designed to build confidence in math and science and exposure to careers in science and technology.