GOALI: Atomic Layer Deposition Growth of Challenging Transition Metal Thin Films

在这个由化学系大分子、超分子和纳米化学项目资助的项目中，韦恩州立大学的Charles H.温特将为第一排过渡金属薄膜的生长开发新的前驱体和沉积方法。该项目包括合成和表征具有优化的原子层沉积(ALD)前驱体性质的过渡金属硅基络合物，过渡金属硅基络合物与含有其他配体的互补过渡金属络合物的溶液反应以识别提供金属粉末的反应物对，溶液反应向原子层沉积过程的转化，以及铜/锰合金膜的形成和自形成的锰基铜扩散障碍的演示。该项目将与SAFC Hitech合作实施，这将使先进的ALD前体评估、大规模前体合成、先进的生长试验和技术转让成为可能。更广泛的影响包括培训博士后研究员以及研究生和本科生，通过将包括韦恩州立大学和SAFC高技术人员在内的GOALI计划下的合作小组聚集在一起，加强研究和教育基础设施，为韦恩州立大学的学生在SAFC高技术公司进行工业实习，以及拥有新的前驱体和第一排过渡金属薄膜的原子层沉积工艺的潜在社会效益。金属薄层只有几个原子的厚度，在微电子器件和功能材料方面有许多现有和预期的未来应用。然而，所需的沉积工艺仅对少数第一行过渡金属元素是已知的。这项研究旨在开发新的分子前体和沉积化学，使这些金属能够在低温下进行原子层生长。所提出的研究的成功实施可能使实际应用成为可能，例如微电子器件中的自形成铜扩散势垒层、磁性随机存取存储器器件的制造以及需要第一排过渡金属薄膜的其他器件的制造。该项目的技术将有助于微电子设备的继续微型化，这将对经济产生广泛的积极影响。

In this project funded by the Macromolecular, Supramolecular and Nanochemistry Program of the Chemistry Division, Charles H. Winter of Wayne State University will develop new precursors and deposition methods for the growth of first row transition metal thin films. The project entails the synthesis and characterization of transition metal silyl complexes with optimized atomic layer deposition (ALD) precursor properties, solution reactions of the transition metal silyl complexes with complementary transition metal complexes containing other ligands to identify reactant pairs that afford metal powders, transformation of the solution reactions to ALD processes, and demonstration of copper/manganese alloy film formation and self-forming manganese-based copper diffusion barriers. This project will be performed in collaboration with SAFC Hitech, which will enable advanced ALD precursor evaluation, large scale precursor synthesis, advanced growth trials, and technology transfer to industry. The broader impacts involve training postdoctoral fellows and graduate and undergraduate students, enhancing research and education infrastructure by bringing together a collaborative group under the GOALI program that includes Wayne State University and SAFC Hitech personnel, industrial internships for Wayne State University students at SAFC Hitech, and the potential societal benefits of having new precursors and atomic layer deposition processes for first row transition metal thin films.Thin layers of metals, only a few atoms in thickness, have many existing and anticipated future applications in microelectronics devices and functional materials. However, the required deposition processes are known for only a few, first row transition-metal elements. This research seeks to develop new molecular precursors and deposition chemistry that would enable the low temperature, atomic layer growth of these metals. Successful execution of the proposed research could enable practical applications such as self-forming copper diffusion barrier layers in microelectronics devices, magnetic random access memory device fabrication, and manufacturing of other devices that require thin films of first row transition metals. The technology from this project would contribute to the continued miniaturization of microelectronics devices which would have a broad, positive impact on the economy.