PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
批准号:
1414236
负责人:
Joan Redwing
金额:
$20.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-07-01 至 2017-07-31
中文摘要
这个PFI: AIR技术翻译项目的重点是翻译一项关于铝用于硅表面纹理的研究发现,以满足对硅太阳能电池低成本制造方法的需求。该项目将产生一个基于一步制造工艺的纳米硅太阳能电池的原型。一步制造过程很重要,因为它解决了开发可持续、低成本太阳能制造技术的需要,同时保持了高能量转换效率。它具有以下独特的特点:它利用铝的双重作用,在晶体硅中形成p-n结,同时使硅表面织构化,以减少反射损耗;它减少了太阳能电池制造所需的加工步骤,而且它是基于地球上丰富的材料。这些特点提供了几个优势,包括降低了工艺复杂性,提高了可持续性,并降低了成本,与领先的竞争工艺相比,使用金和银蚀刻硅表面来制造纳米纹理太阳能电池在这个市场空间。该项目与硅纳米线太阳能电池的领先开发商Bandgap工程公司合作,提供设备测试和评估能力,协助成本模型开发,并指导该技术从研究发现到商业现实的商业化方面的工作。该项目解决了以下技术差距,因为它从研究发现转化为商业应用。它将研究使用铝薄膜同时作为结形成的p型扩散源和作为催化剂介导纳米织构以在表面形成抗反射层。将研究纳米线与纳米锥的纹理形态对器件光学和光伏性能的影响。研究人员将开发钝化纳米织构表面的方法,以减少表面复合造成的效率损失。将制定该过程的综合成本模型,以指导商业化计划。该项目的总体目标是开发一种基于一步工艺的原型太阳能电池,其功率转换效率与使用金/银诱导蚀刻技术制造的最先进的纳米纹理太阳能电池相当或更高。未来十年,晶体硅太阳能电池每瓦成本的降低有望带来潜在的经济影响,这将有助于美国在可再生能源领域的竞争力。
英文摘要
This PFI: AIR Technology Translation project focuses on translating a research discovery on the use of aluminum for silicon surface texturing to fill the need for lower cost fabrication methods for silicon solar cells. The project will result in a prototype of a nanotextured silicon solar cell based on a one-step fabrication process. The one-step fabrication process is important because it addresses the need to develop sustainable, low cost solar manufacturing technology while maintaining high energy conversion efficiency. It has the following unique features: it uses aluminum in a dual role to form a p-n junction in crystalline silicon while simultaneously texturizing the silicon surface to reduce reflective losses; it reduces the number of processing steps required for solar cell fabrication, and it is based on earth abundant materials. These features provide several advantages including reduced process complexity, improved sustainability, and reduced cost when compared to the leading competing process which uses gold and silver to etch the silicon surface to fabricate nanotextured solar cells in this market space. The project engages Bandgap Engineering Inc., a leading developer of silicon nanowire solar cells, to provide device testing and evaluation capabilities, assist with cost model development and guide commercialization aspects in this technology translation effort from research discovery toward commercial reality. This project addresses the following technology gaps as it translates from research discovery toward commercial application. It will investigate the use of an aluminum thin film to simultaneously serve as the p-type diffusion source for junction formation and as a catalyst to mediate nanotexturing to form an anti-reflection layer on the surface. The effect of texturing morphology, i.e. nanowire versus nanocone, on the optical and photovoltaic properties of the devices will be studied. Methods to passivate the nanotextured surface will be developed to reduce efficiency losses resulting from surface recombination. A comprehensive cost model of the process will be developed to guide commercialization plans. The overall goal of the project is the development of a prototype solar cell based on the one-step process that exhibits a power conversion efficiency comparable to or higher than state-of-the-art nanotextured solar cells fabricated using gold/silver-induced etching. The potential economic impact is expected to be a reduction in the cost per Watt of crystalline silicon solar cells over the next decade, which will contribute to the U.S. competitiveness in renewable energy.
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Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2023
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负责人:Joan Redwing
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依托单位:
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批准号:2039351
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项目类别:Cooperative Agreement
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资助金额:$2010.0万
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负责人:Joan Redwing
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依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
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批准号:2138270
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2021
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负责人:Joan Redwing
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EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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项目类别:Standard Grant
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资助金额:$6.54万
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财政年份:2020
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负责人:Joan Redwing
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依托单位:
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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批准号:1917552
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:2019
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负责人:Joan Redwing
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Graphene Encapsulated Growth of 2D Materials
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资助金额:$43.0万
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财政年份:2018
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负责人:Joan Redwing
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依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
Acquisition of an MOVPE System for Electronic Materials Research and Education
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批准号:0076312
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2000
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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项目类别:Standard Grant
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负责人:Joan Redwing
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国内基金
海外基金
湍流和化学交互作用对H2-Air-H2O微混燃烧中NO生成的影响研究
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批准号:51976048
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项目类别:面上项目
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资助金额:61.0万元
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批准年份:2019
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负责人:邱朋华
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依托单位: