GOALI: Nanomanufacturing of Atomically Precise Bipolar Electronic Devices

原子级精密制造对未来经济活动的影响怎么强调都不过分。特别是原子精度双极电子器件的发展是一种潜在的颠覆性技术，导致制造领域的就业增长，可以利用新的高价值应用。 预计这一发展也将对国家安全产生积极影响。 最近的努力表明，施主掺杂剂原子的精确放置是可行的。该奖项将以原子精度研究受主掺杂剂原子的位置，它应该为各种高性能纳米电子器件开辟道路，并可能推动量子计算器件的发展。 一个成功的结果将允许纳米制造的广泛的新的双极器件具有非凡的性能特点。原子级精确的受体掺杂能力将实现新的器件机制，因为n型和p型区两者将允许工程化新的器件和电路设计。 解决这个问题将为以后的探索开辟独特的设备物理学的新领域。 与成熟的纳米技术行业合作伙伴的合作将加快技术转让的速度，并将重点放在能产生最有效结果的部分调查上。这种学术与小企业的合作为研究生提供了在成熟的高科技环境中获得宝贵经验的机会。 该项目的目标是展示一种受体作为p型掺杂剂的纳米制造双极器件的原子精确掺杂方法。 这种能力将使新型器件能够在模拟电子应用中提供前所未有的低噪声、高带宽性能。 尽管已经使用磷供体证明了n型掺杂剂的原子级精确掺杂，但是合适的受体掺杂剂物质的开发尚未解决，因为基础科学问题仍然没有答案。 大学研究人员将通过与工业合作伙伴的科学人员合作来解决这个问题，该合作伙伴是全国领先的纳米制造小公司，使用扫描隧道显微镜（STM）光刻工具来生产原子级精确的纳米结构。 一个创新的超高真空的方法，生产铝烷将被调查。这些研究将产生选择性吸附在清洁硅二聚体图案上的受体物种。工业合作伙伴需要这一结果来实现基于STM的纳米制造步骤。 除了吸收的研究，低温掺杂剂激活过程和有害的扩散效应，使用硅分子束外延技术的预防将进行探讨。 此外，将进行电特性研究，以检查p型掺杂区的电特性。

The impact of atomically precise manufacturing on future economic activity cannot be overstated. In particular the development of atomically-precise bipolar electronic devices is a potentially disruptive technology, leading to job growth in manufacturing arenas where novel high-value applications can be exploited. It is expected that this development will also positively impact national security. Recent efforts show that precise placement of donor dopant atoms is feasible. This award will study the placement of acceptor dopant atoms with atomic precision and it should open pathways to empower a wide range of high-performance nanoelectronic devices, as well as potentially advance the development of quantum computation devices. A successful outcome would permit nanomanufacturing of a wide range of new bipolar devices with extraordinary performance characteristics. An atomically precise acceptor doping capability would enable new device regimes since both n-type and p-type regions would allow engineering new devices and circuit designs. Solving this problem would open new realms of unique device physics for later exploration. The collaborative effort with a proven nanotechnology industry partner will accelerate the rate of technology transfer and sharpen the focus on parts of the investigations that yield the most effective outcomes. This academic-small business collaboration offers opportunities for a graduate student to gain valuable experience in a well-established high-tech environment. The goal of the project is to demonstrate an acceptor as a p-type dopant for nanomanufacturing bipolar devices by atomically precise doping methods. This capability would enable new types of device regimes that offer unprecedented low-noise, high-bandwidth performances in analog electronic applications. Although atomically precise doping of n-type dopants has been demonstrated using phosphorous donors, the development of a suitable acceptor dopant species is unsolved since basic science questions remain unanswered. University researchers will address this problem by collaborating with the scientific staff of an industrial partner, which is the nation's leading small company in nanomanufacturing, using scanning tunneling microscopy (STM) lithography tools to produce atomically precise nanostructures. An innovative ultra-high vacuum approach that produces alanes will be investigated. These studies will produce acceptor species that adsorbs selectively on patterns of clean Si dimers. This outcome is needed by the industrial partner to enable STM based nanomanufacturing steps. In addition to the absorption studies, low-temperature dopant activation processes and the prevention of deleterious diffusion effects using silicon molecular-beam-epitaxy technology will be explored. Also, electrical characterization investigations will be done to examine electrical properties of p-doped regions.