Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode

采用金属-绝缘体-半导体(MIS)型载流子限制结构，研究了InP和GaAs层中的半导体载流子及其与电磁场的行波相互作用。制作了行波放大器(TWA)类器件，并测量了器件的导纳。首次从导纳的漂移速度关系中观察到了载波的存在，从漂移速度的频率关系中观察到了两种相互作用模式，给出了电导的还原峰值。为了讨论它们的行为，给出了用漂移等离子体的修正有效介电常数叠加各种空间谐波的TM分析。在该模型中，考虑了载流子分布的不均匀。该模型的实验结果与理论结果吻合较好。此外，还从理论上研究了界面态对相互作用的影响。结果表明，高界面态密度引起的寄生导纳抵消了负电导。但是，当界面态密度降低到2×10^&lt；11&gt；cm^&lt；-2&gt；ev^&lt；-1&gt；时，预计将出现净负电导。另一方面，在与InP匹配的GaAs晶格中，由于其高的电子迁移率，有望成为先进MMIC的材料。在该结构中，充分发挥了In-GaAs的优良特性。将我们独创的SiICL技术应用于绝缘体-In-GaAs界面上，界面态密度降低到1×10~(-1)cm~(-2)；ev~(？)可见，作为先进单片集成电路中的关键器件，InGaAsMISM结构在固态行波管中具有广阔的应用前景。

The semiconductor carrier waves and their traveling wave interactions with the electromagnetic fields in InP and GaAs layrs using the metal-insulator-semiconductor (MIS)-type carrier confinement structure were studied. Traveling wave amplifier (TWA)-type devices were made and the admittance of the devices was measured. For the first time, the existence of carrier waves was observed from the drift velocity dependence of the admittance and two modes of interaction were observed from the frequency dependence of the drift velocity, which gave the reduction peaks of the conductance. To discuss their behavior, TM analysis using superposition of various space harmonics in terms of the modified effective permittivity for the drift plasma is presented. In the model, nonuniformity of the carrier distributions is considered. This model gives fairly good agreement between the experiments and theory. Moreover, the influence of the interface states on the interactions is studied theoretically. It is indicated that parasitic admittance due to a high interface state density cancels out negative conductance. But, when the interface state density is decreased to below 2x10^<11>cm^<-2>eV^<-1>, it is predicted that net negative conductance will be observed.On the other hand, In GaAs lattice matched to InP is promising material for advanced MMICs, with its high electron mobility. In the MIS structure, excellent characteristics of In GaAs is fully derived. Applying our original Si ICL technique to insulator - In GaAs interface, interface state density was reduced as low as 1x10^<11>cm^<-2>eV^<-1>. It is clear that InGaAs MIS structure is promising for the solid state TWA, which is key device in advanced MMICs.