Study on Surface Reaction Processes Using High Performance Beam Device

为了研究半导体制造中等离子体加工(刻蚀、CVD)过程中的表面反应过程，进行了高度受控的束流实验，将几种对加工有重要作用的反应离子物种照射到具有控制能量和通量的衬底上，并用高灵敏度的四极质谱仪检测了各种表面解吸的离子自由基和中性自由基。同时，对辐照后的表面进行了XPS原位分析，目的是在此基础上了解表面上发生的反应过程。本课题主要围绕以下几个方面展开：(1)改进了实验装置。改进了实验装置：提高了中性自由基的检测灵敏度，并在装置上安装了原位XPS装置。(2)氟碳离子束在硅表面的反应研究(3)氟碳离子束在二氧化硅表面的反应研究用四极质谱计和原位XPS对二氧化硅表面的CF3~+和CF2~+离子束进行辐照，对表面生成的物种和表面状态进行监测。此外，还研究了刻蚀速率与表面脱附物种的相关性。(4)氟离子辐照硅表面，监测表面产生的物种，发现氟离子是刻蚀的重要物种之一。

To investigate surface reaction processes in plasma processing (etching, CVD) for semiconductor manufacturing, highly controlled beam experiment has been carried out A few kinds of reactive ionic species important for processing are irradiated to a substrate with controlled energy and flux, and various kinds of surface-desorbed ionic and neutral radicals are detected by highly sensitive quadrupole mass spectrometer. At the same time, beam-irradiated surface is analyzed by in-situ XPS, Our purpose is to understand reaction process occurring on the surface based on these measurements.The project is carried out focused on the following points.( 1 ) Improvement of the experimental setupThe experimental setup is improved : detection sensitivity of neutral radicals are increased and in-situ XPS device is installed to the apparatus.( 2 ) Study on reactions of fluorocarbon ion beam on silicon surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon surface, where surface-produced species such as SiF_2, SiF_4 and CF_x neutral radicals are successfully detected. Furthermore, surface state is monitored by in-situ XPS.( 3 ) Study on reactions of fluorocarbon ion beam on silicon dioxide surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon dioxide surface, where surface-produced species and surface state are monitored by quadrupole mass spectrometer and in-situ XPS. Furthermore, the correlation of etching rate with species desorbed from the surface is investigated.( 4 ) Study on fluorine ion beam with siliconFluorine ions which are believed to be one of important species for etching are irradiated on silicon surface, while surface-produced species are monitored.