Generation of ccryoplasma and its application to materials processing

在这个项目中，继续热等离子体和低温等离子体，开发了包括低于冰点的等离子体气体温度Tg&lt；300K的第三个气体温度范围的等离子体。在下文中，我们将这种等离子体称为“低温等离子体”，以区别于传统的热等离子体和低温等离子体。例如，在296~5K的较宽温度范围内，我们研究了低温等离子体射流的连续气体温度相关产生，并测量和分析了低温等离子体的光发射和I-V特性。此外，低温等离子体处理极大地抑制了等离子体自由基物种在纳米多孔材料中的深度渗透，这表明这种限制效应与自由基物种气体相扩散系数的变化无关，而是由粘着系数、自由基复合和反应因子的增加决定的，有利于等离子体自由基物种早期不可逆的表面吸附。

In this project, continuing to thermal plasma and low-temperature plasma, plasma with a third range of gas temperatures Tg<300 K including plasma gas temperature below freezing point was developed. In the following, we call this plasma "cryoplasma" to distinguish it from conventional thermal and low-temperature plasmas. For example, we have studied the continuous gas temperature-dependent generation and of a cryoplasma jet in a broader temperature range from 296 down to 5 K. The optical emission and I-V characteristics of the cryoplasma were also measured and analyzed. Moreover, plasma processing at cryogenic temperatures tremendously suppresses the depth penetration of plasma radical species within nanoporous materials to demonstrate that this confining effect is surprisingly unrelated to changes in the phase diffusivity of radical species gas, but is determined by the increase of the sticking coefficient and the radical recombination and reaction factors, favoring an early irreversible surface adsorption of the plasma radical species.