Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy Method

我们系统地分析了用我们开发的溅射外延直接在重p掺杂的Si上沉积Ge平面薄膜的方法，并明确了Ge平面生长机制，其中Ge层在Si/Ge界面上产生90°位错，薄膜中产生小应变。位错的产生可能是由于较短的Ge吸附物迁移长度和掺杂P原子的存在。我们还发现在重b掺杂的Si上有类似的Ge生长行为，我们提出的方法有望很好地用作Ge虚拟衬底。

We have systematically analyzed the method of formation of a Ge flat film deposited directly on heavily P-doped Si by our developed sputter epitaxy and have cleared the flat Ge growth mechanisms where the Ge layer is grown flat with generation of 90° dislocations at a Si/Ge interface and a small strain in the film. The dislocations are probably generated due to the short Ge adsorbate migration length and presence of doped P atoms. We have also found a similar Ge growth behavior on a heavily B-doped Si, and our proposed method is expected to be well used as a Ge virtual substrate.