STUDY ON LOW TEMPERATURE FORMATION OF VERY THIN AND HIGH-QUALITY Si-BASED INSULATING FILMS AND ITS FUNCTIONAL EVALUATION

本研究旨在建立利用溅射型电子回旋共振等离子体低温制备超薄高质量硅基绝缘膜的工艺，并探索所沉积薄膜的功能性。结果如下：1.建立了130ﾟC2低温击穿电场为0110 mV/cm的SiO_2薄膜制备工艺，成功地制备出厚度为9 nm的超薄SiO_2薄膜，其界面态密度小于1CHIl0^&lt；3.通过优化氧气和氮气混合气体中的等离子体，我们成功地制备出了击穿特性为13 mV/cm的SiON薄膜。4.采用溅射式电子回旋共振等离子体在室温下制备了密度较大的SiN薄膜。在90 0ﾟC下，SiN薄膜的折射率、化学刻蚀速率、红外光谱特性与化学气相沉积的基本相同。

This research aimed to establish techniques for fabricating very thin and high quality Si-based insulating films at low temperature by using sputtering-type ECR plasma and to find the functionality of the deposited films, The results are summarized as follows :1.we have established the deposition techniques of SiO_2 having breakdown field 0110 MV/cm at low temperature of 130ﾟC2.We have succeeded in the fabrication of very thin SiO_2 having a thickness of 9 nm which showed high breakdown characteristics of 9 MV/cm interface state densities of less than 1CHIl0^<1I>cm^<-2>eV^<-1>, and fixed charge of less than 1CHIl0^<1I>cm^<-2>.3.We have succeeded in the fabrication of SiON films having breakdown characteristics of 13 MV/cm at low temperature of 130ﾟC by optimizing the plasma from mixture gases of oxygen and nitrogen.4.Dense SiN film was deposited by using sputtering-type ECR plasma at room temperature. The refractive index, chemical etching rate, IR characteristics of the SiN films had almost the same as that deposited by CVD at 900 ﾟC.