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SHF: Small: Stress Management in Integrated Circuits

SHF: Small: Stress Management in Integrated Circuits
SHF:小型:集成电路的压力管理
批准号:
1421606
负责人:
Sachin Sapatnekar
金额:
$45.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-07-15 至 2019-06-30

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中文摘要
翻译
速度和功率是数字电子集成电路的关键属性,其转化为系统级指标,例如电子系统中的响应时间和电池寿命。随着技术的进步,发现这些性能参数越来越依赖于系统中的热应力和机械应力。该应力可以被有意地引入(内在应力)以增强电路性能,或者由于设计因素或由于电路中的各个晶体管所面临的环境而可能是无意的(外在应力)。该提案的目标是通过开发(a)快速建模方法(B)调用建模解决方案的优化技术,实现在存在应力的情况下对全芯片性能分析和优化的系统和科学方法。应力建模的当前技术状态显示很少或没有用于应力效应的全芯片分析的重要方法,并且很少以系统的方式执行应力优化。该项目将开发新的分析和半分析建模技术,计算效率高,可扩展,可以快速分析常见的结构。该方法将利用压力分析框架工具箱,根据片上环境进行调整,并寻求新的效率。将通过调用设计关键部分的建模技术来执行全芯片分析,以确定时序和功耗的漂移。该项目将在硅化前阶段和硅化后阶段进行应力优化。该项目的研究目标将辅之以教育工作和向工业界转让技术的努力。
英文摘要
Speed and power are key attributes of a digital electronic integrated circuit that translate to system-level metrics such as response times and battery life in electronic systems. With progress in technology, these performance parameters are found to be increasingly dependent on thermal and mechanical stress in the system. This stress may be intentionally introduced (intrinsic stress) to enhance circuit performance, or may be unintentional (extrinsic stress) due to design factors or due to the environment faced by individual transistors in the circuit. The goal of this proposal is to enable a systematic and scientific approach to full-chip performance analysis and optimization in the presence of stress, through the development of (a) fast modeling approaches (b) optimization techniques that invoke the modeling solutions. The current state of the art in stress modeling shows few to no significant approaches for full-chip analysis of stress effects, and stress optimization is rarely performed in a systematic way. This project will develop novel analytical and semi-analytical modeling techniques that are computationally efficient and scalable, permitting fast analysis of commonly encountered structures. The approach will draw upon a toolbox of stress analysis frameworks, tailoring them to on-chip environments and seeking new efficiencies. Full-chip analysis will be performed by invoking the modeling techniques on critical segments of the design to determine the drift in timing and power. The project will perform stress optimization at both the pre-silicon stage and the post-silicon stage. The research goals of the project will be supplemented by educational efforts as well as technology transfer efforts to industry.
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