Charge Transport and Storage in Multi-Insulator Microstructures

这项研究涉及基本器件物理电子学 了解固态微结构的基本局限性 它依赖于载流子的量子力学隧穿， 储存陷阱 这些陷阱为非易失性存储器提供了基础 在一种新的多绝缘体器件结构-- 金属阻挡氧化物-氮化物-隧穿氧化物-硅（MONOS） 微观结构 这项研究通过以下方式探索了物理机制： 该电荷注入、传输和存储是在这些 装置. 实验方法的重点是“缩放”的微观结构 了解决定人类行为的基本机制， 这些器件的擦除/写入、保持和耐久性能。 一个 本研究的目的是建立一个分析模型， 海洋观测系统内捕集器的性质和分布 氮化物存储层。 该研究还试图探索 这些陷阱的起源和控制通过一个模型的过程 多层绝缘膜制备技术。 的结果 研究影响高密度，非挥发性，硅的设计 微结构的高速，长时间的保留，存储器大大 提高骑行耐力。

This research is concerned with fundamental device physical electronics to understand the basic limitations of solid-state microstructures which rely on quantum mechanical tunneling of carriers into deep storage traps. These traps provide the basis for non-volatile memory structures in a new multi-insulator device structure--the Metal-blocking oxide-nitride-tunneling oxide-silicon (MONOS) microstructure. This research explores the physical mechanisms through which charge injection, transport, and storage is achieved in these devices. The experimental approach focuses on "scaled" microstructures to understand the fundamental mechanisms which determine the erase/write, retention, and endurance properties of these devices. An objective of this research is to develop an analytical model of the MONOS operation in terms of the nature and distribution of traps within the nitride storage layer. The research also seeks to explore the origin and control of these traps through a model of the process technology for multi-insulator film preparation. The results of this research impact the design of high density, non-volatile, silicon microstructures for high-speed, long retention, memories with greatly improved endurance to cycling.