GaAs Buffer Layers by Ion Implantation and Metalorganic Chemical Vapor Deposition

GaAs金属的器件性能- 半导体场效应晶体管 （MESFELEX）对常规半绝缘 GaAs衬底受到以下因素的限制： 背栅或侧栅效应， 从而导致了不希望串扰 相邻的设备，从而施加 包装密度的限制。 最近 研究表明， 低温缓冲层，其通过 分子束外延（MBE）可以导致 在许多性能改进中， 包括消除反向门控。 由于其非常高的加工成本， MBE不是商业上可行的生产 法 我们建议形成一种效果 使用离子注入的缓冲层， 展示了可制造工艺。 的主要特征之一， MBE生长的缓冲层是过量的 就像电影中一样。 离子注入 非常适合模拟MBE层 由于注入条件可以 严格控制以精确设计 通过调整注入量 剂量、能量和剂量等参数 率 第一阶段的工作是使用离子 注入富砷隔离 GaAs缓冲层。 结构性 以及缓冲器的电性能 将对图层进行研究并与 那些MBE生长的层。

Device performance of GaAs metal- semiconductor field effect transistors (MESFETs) on conventional semi-insulating GaAs substrates has been limited by backgate or sidegate effects which can lead to undesirable cross-talk between neighboring devices and thus impose limits on packing densities. Recent research has shown that incorporation of a low temperature buffer layer grown by molecular beam epitaxy (MBE) can result in many performance improvements, including elimination of backgating. Because of its very high processing cost, MBE is not commercially viable production method. We propose to form an effect buffer layer using ion implantation, demonstrated manufacturable process. One of the dominant characteristics of the MBE-grown buffer layers is an excess of As in the film. Ion implantation is well suited to simulate the MBE layers since implantation conditions can be tightly controlled to precisely engineer the As profile by adjusting implantation parameters such as dose, energy, and dose rate. Phase I work is to use ion implantation to produce As-rich isolating buffer layers in GaAs. The structural and electrical properties of the buffer layers will be studied and compared to those of MBE-grown layers.