III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties

9618771卡恩这个项目解决了III-V氮化物的基本表面和界面问题，包括金属-氮化物势垒和异质结的形成，以及这些结处的能带偏移和电子态密度。方法是将从广泛的表面光谱和显微技术获得的信息与设备类结构上的电学测量联系起来。用MOCVD方法生长的GaN、AlN、AlGaN和In GaN层中都使用了n和p掺杂的GaN。该项目解决了材料科学的一个专题领域的基础研究问题，该领域具有高度的技术相关性、紧凑和高效的蓝绿色光谱区域的光源。这项研究将在基础水平上为电子/光子器件的重要方面贡献基本的材料科学知识。此外，从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而有助于提高先进器件和电路的性能。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9618771 Kahn This project addresses fundamental surface and interface issues in III-V nitrides, including the formation of metal-nitride barriers and heterojunctions, and the band offsets and electronic state density at these junctions. The approach is to link information obtained from a wide range of surface spectroscopy and microscopy techniques to electrical measurements on device-like structures. Both n- and p-doped GaN, AlN, AlGaN and In GaN layers grown by MOCVD will be used in the study. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance, compact and efficient light sources in the blue-green spectral region. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***