Ion Beam Induced Exfoliation of Silicon Structures

9972859梅耶尔这项建议解决了离子束诱导硅结构剥离(离子切割)背后的基本材料科学问题--这是硅基电路3-D集成的硅技术中感兴趣的一个主题。随着芯片上器件的密度增加到光刻施加的限制，平面IC中的器件互连越来越成问题。电路的三维集成是提高电路封装密度和功能的一个可能的未来方向。除了垂直集成芯片中的同质集成(例如，硅上的硅)、异质集成(例如，具有光子、微波或铁电材料的硅)，允许集成结构的多种功能的可能性。该项目方法包括四个要素：1)除了(100)硅片外，还使用(111)和(110)来研究图案层转移过程。这种方法应该确认硅的解离面和植入H血小板的优先位置是否相关，以产生均匀的转移层。2)探讨辐射损伤促进剥落的机制。首先，共注入Ar和H，以测试较大质量的共同注入的惰性气体离子是否具有与共同注入H的He和B类似或改善的效果。3)研究H向B的低温迁移以及在提供均匀切割的图案层转移中的影响。通过SIMS和/或前向散射来跟踪H原子的运动，研究H向B的迁移速率。4)研究了硅片取向、辐射损伤和电场的综合效应，得到了均匀切割的图案层。该项目是协作性的，将在亚利桑那州立大学和加州大学圣地亚哥分校利用联合设施的互补性进行。在亚利桑那州立大学，以透射电子显微镜和离子束分析为特色，在加州大学圣迭戈分校，提供样品制备和电学评估。这两个机构都有离子束分析(卢瑟福背散射和沟道)的能力。%该项目解决了材料科学领域的基础研究问题，该领域具有很高的潜在技术相关性。这项研究将在基础水平上为电子/光子器件的新方面贡献基本的材料科学知识。从研究中获得的基本知识和理解有望为提高先进器件和电路的性能和稳定性贡献新的知识，为设计和生产改进的材料和加工工艺提供更多的基础知识和基础。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。

9972859 Mayer This proposal addresses fundamental materials science issues underlying ion-beam induced exfoliation of silicon structures (ion-cutting)--a topic of interest in Si technology for 3-D integration of silicon based circuitry. As the density of devices on chips increases to a lithography-imposed limit, device interconnection in planar ICs is increasingly problematic. Integration of circuits in three dimensions is a possible future direction for increasing circuit packing density and functionality. In addition to homogeneous integration in vertically integrated chips (e.g. Si on Si), heterogeneous integration (e.g. Si with photonic, microwave or ferroelectric material), allows for the possibility of multiple functionality of the integrated structures. The project approach consists of four elements: 1) use of (111) and (110), in addition to (100) Si wafers, to investigate the process of patterned layer transfer. This approach should confirm if the cleavage planes of Si and the preferred location of implanted H platelet are correlated to yield an evenly transferred layer. 2) investigate the mechanism of enhanced exfoliation due to radiation damage. Co-implant Ar and H initially to test if a heavier mass of the co-implanted inert gas ion has a similar or improved effect as compared to He and B co-implanted with H. 3) Investigate the low temperature migration of H towards B and the effect in patterned layer transfer in providing an even cut. Investigate the rate of migration of H toward B by SIMS and/or forward scattering to track the motion of H atoms. 4) Study the combined effects of wafer orientation, radiation damage and electric fields to yield evenly cut patterned layers. The project is collaborative and will be carried out at both ASU and UCSD making use of the complementary nature of the combined facilities. At ASU, transmission electron microscopy and ion beam analysis is featured, and at UCSD, sample preparation and electrical evaluation are provided. There is the capability for ion beam analysis (Rutherford backscattering and channeling) at both institutions.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the perform-ance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.