Nanoscience of Metalorganic Chemical Vapor Deposition of Compound Semiconductors

提案标题：化合物半导体金属有机化学气相沉积纳米科学提案编号：CTS-0094484主要研究员：Robert Hicks机构：加州洛杉矶大学本项目的目标是了解磷化铟（InP）、砷化铟镓（InGaAs）、和通过金属有机化学气相沉积（MOCVD）的氮砷化铟镓（InGaAsN）。 该研究结合了使用扫描隧道显微镜，红外光谱，反射差光谱和X射线光电子能谱的表面结构的实验研究与从头算量子化学计算，以提供控制MOCVD生长的表面过程的见解。 该研究计划包括三个不同的主题的研究：InP上的V族源的分解反应，故意掺杂剂的表面化学，和有机单层的表面钝化。 磷化铟上的膦，砷化氢，氨，二甲肼，硅烷，四甲硅烷基甲烷，和环戊烯的表面反应化学将被确定。 为了帮助识别吸附的物种，红外波段将与量子化学计算的结果进行比较。 这项工作在制造用于无线和光通信系统的异质结双极晶体管中有应用。

Proposal Title: Nanoscience of Metalorganic Chemical Vapor Deposition of Coumpound SemiconductorsProposal Number: CTS-0094484Principal Investigator:Robert HicksInstitution: University of California Los AngelesThe objective of this project is to understand the surface reactions involved in the growth, doping, and passivation of indium phosphide (InP), indium gallium arsenide (InGaAs), and indium gallium arsenide nitride (InGaAsN) by metalorganic chemical vapor deposition (MOCVD). The research combines experimental studies of the surface structure using scanning tunneling microscopy, infrared spectroscopy, reflectance-difference spectroscopy, and x-ray photoemission spectroscopy with ab initio quantum chemistry calculations to provide insights into the surface processes that control MOCVD growth. The research plan encompasses a study of three different topics: the decomposition reactions of group V sources on InP, the surface chemistry of intentional dopants, and the surface passivation by organic monolayers. The surface reaction chemistry of phosphine, arsine, ammonia, dimethylhydrazine, silane, tetrasilylmethane, and cyclopentene on InP will be determined. To help identify adsorbed species, infrared bands will be compared with results from quantum chemistry calculations. The work has application in the fabrication of heterojunction bipolar transistors used in wireless and optical communications systems.