Modeling Silicon Carbide Devices for Power Supply Performance Evaluation

该项目将专注于碳化硅（SiC）器件的紧凑电路仿真模型。也就是说，功率MPS二极管，PiN二极管，BJT， npnp晶闸管和MTO器件将被研究。具体而言，该项目的目标是：物理表征MPS， PiN， BJT和晶闸管SiC器件设计和开发这些器件的电路仿真模型根据实际器件测量验证SiC功率器件模型演示和验证关键电力电子应用中的SiC功率器件模型紧凑的电路仿真模型使设计人员能够更有效地利用电路和系统中的技术。电力电子设计人员依靠计算机模拟来深入了解电路运行的细节。除了标称工作条件外，设计师还通过动态热分析、最坏情况分析、由于零件制造公差导致的电路性能统计变化、故障模式和影响等一系列研究来分析设计的稳健性，以确定电路的安全工作区域。为了进行这些模拟，需要建立模型。这样的分析实际上不能使用硬件原型来执行。碳化硅由于其独特的电气和机械性能，能够在500℃的温度下工作。与硅基器件相比，其他优点还包括可靠性、更高的抗热失控能力、更低的开关损耗和更高的电流密度。由于SiC的高导热性，在许多飞机、船舶、车辆和公用事业电源转换应用中，系统冷却要求、质量和成本都有可能显著降低。现在SiC功率器件变得更加可靠和可复制，是时候开始研究和开发精确的、基于物理的模型了。随着商用SiC器件数量的增加，设计人员将需要越来越多的组件模型（特征部件）用于电路模拟器。由于正确构建和验证准确的模型需要两年的时间，因此SiC器件模型必须与器件技术并行开发。美国国家标准与技术研究院（NIST）和NASA Glenn两个联邦机构的合作者将在整个项目期间为UA研究人员提供SiC设备、设施和夏季就业机会。进一步的合作将与Cree研究公司和诺斯罗普-格鲁曼公司进行。

This project will concentrate on compact circuit simulation models for Silicon Carbide (SiC) devices. Namely, the power MPS diode, PiN diode, BJT, and npnp thyristor and MTO devices will be investigated. Specifically, the project objectives are to: Physically characterize MPS, PiN, BJT, and thyristor SiC devices Design & develop circuit simulation models for these devices Validate the SiC power device models against actual device measurements Demonstrate and validate SiC power device models in key power electronic applicationsCompact circuit simulation models enable designers to more effectively utilize a technology in circuits and systems. Power electronic designers rely on computer simulation for insight into the details of the operation of their circuits. In addition to nominal operating conditions, the designer analyzes the robustness of the design through a number of studies such as dynamic thermal analysis, worst case analysis, statistical variations in circuit performance due manufacturing tolerances on parts, and failure modes and effects to determine the safe operating area of the circuit. In order to perform these simulations, models are required. Such analysis cannot practically be performed using hardware prototypes. Silicon carbide is capable of operating temperatures of 500C because of its unique electrical and mechanical properties. Other advantages compared to silicon-based devices exist regarding reliability, higher immunity to thermal runaway, reduced switching losses, and higher current density. Due to SiC's high thermal conductivity, significant savings in system cooling requirements, mass, and cost are likely for many aircraft, shipboard, vehicle, and utility power conversion applications.Now that SiC power devices are becoming more reliable and reproducible, it is time for research and development of accurate, physical-based models to commence. As the number of commercially available SiC devices increase, designers will require an increasing number of component models (characterized parts) for use in circuit simulators. Since it takes on the order of two years to correctly construct and validate an accurate model, it is imperative that SiC device models be developed somewhat in parallel with the device technologies. Collaborators at two federal agencies, National Institute of Standards and Technology (NIST) and NASA Glenn, will provide access to SiC devices, facilities, and summer employment to the UA researchers throughout the duration of the project. Further collaboration will occur with Cree Research and Northrop-Grumman.