EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition

非技术：过渡金属硫族化合物（tmc）结晶为二维原子片，赋予它们不同寻常的电子特性，可以通过改变层的数量、排列和组成来改变。这些参数的调整为实现电子、光子学和相关技术的潜在应用提供了必须克服的制造挑战。该项目将研究新型薄膜和超导器件的新沉积和加工方法。这项研究将使原子级薄膜在低温下形成，与低成本的玻璃和塑料基板兼容。将金属接触层和介电膜与tmc集成以制造工作装置的技术也将被研究。该项目将支持五名研究生的研究，并为来自宾夕法尼亚州代表性不足的群体和经济困难地区的本科生和高中生提供暑期研究机会。本科生也将参与该项目，作为他们通过宾夕法尼亚州立大学学习工厂组织的高级顶点工程设计项目的一部分。技术：EFRI 2-DARE项目旨在开发单层和多层过渡金属硫族化合物（tmc）的新合成路线和集成策略，以发现基本的结构-性能关系，探索新的物理现象，创造新的薄膜和超导器件技术。将开发用于WSe2、FeSe、NbSe2和相关2D材料的活化原子层沉积（ALD）工艺，该工艺结合热源和等离子体源来促进前驱体分解，从而降低基底温度，从而降低在范德华表面上沉积和介电/金属集成所需的温度。外延模板和衬底图案将用于控制成核和促进面内力，以诱导大面积二维岛屿的自组装。现场诊断将用于深入了解ALD的化学成分。超高分辨率像差校正（扫描）透射电子显微镜（(S)TEM）成像和相关光谱技术将使单层和多层薄膜缺陷的直接成像和化学表征成为可能，提供传统TEM无法获得的信息。将开发器件制造工艺，以使tmc中的电输运和超导性的详细研究成为可能。门控电流电压测量、霍尔效应和准静态电容电压测量将用于表征WSe2和WS2薄膜器件的输运特性。门控FeSe和NbSe2结构的超导性也将被研究，以寻求高温和非常规的超导性。

Non-Technical: Transition metal chalcogenides (TMCs) crystallize as two-dimensional sheets of atoms, giving them unusual electronic properties that can be varied by changing the number, arrangement and compositions of the layers. The adjustment of these parameters provides manufacturing challenges that must be overcome to realize potential applications in electronics, photonics and related technologies. The project will research new deposition and processing methods for novel thin film and superconducting devices. This research will enable atomic level film formation at low temperatures that are compatible with low-cost glass and plastic substrates. Techniques to integrate metal contact layers and dielectric films with TMCs to produe working devices will also be researched. The project will support the research of five graduate students and summer research opportunities for undergraduates and high school students from underrepresented groups and economically challenged regions of Pennsylvania. Undergraduates will also participate in the project as part of their senior capstone engineering design project organized through the Learning Factory at Penn State.Technical: This EFRI 2-DARE project is aimed at the development of new synthetic routes and integration strategies for monolayer and multilayer transition metal chalcogenides (TMCs) to enable discovery of fundamental structure-property relationships, the exploration of novel physical phenomena, and the creation of new thin film and superconducting device technologies. An activated atomic layer deposition (ALD) process for WSe2, FeSe, NbSe2 and related 2D materials will be developed that incorporates thermal and plasma sources to promote precursor decomposition, thereby enabling reduced substrate temperatures that are needed for deposition and dielectric/metal integration on van der Waals surfaces. Epitaxial templating and substrate patterning will be used to control nucleation and promote in-plane forces to induce self-assembly of 2D islands over large areas. In-situ diagnostics will be used to provide insights into the ALD chemistry. Ultra-high resolution aberration-corrected (scanning) transmission electron microscopy ((S)TEM) imaging and related spectroscopy techniques will enable direct imaging and chemical characterization of defects in monolayer and multilayer films, providing information not always accessible by conventional TEM. Device fabrication processes will be developed to enable detailed studies of electrical transport and superconductivity in TMCs. Gated current-voltage measurements, Hall-effect, and quasi-static capacitance-voltage measurements will be used to characterize the transport properties of WSe2 and WS2 thin film devices. Superconductivity in gated FeSe and NbSe2 structures will also be examined to seek high-temperature and unconventional superconductivity.