A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER

已经制造了具有使用二氧化硅膜作为间隔物的硅/纳米间隙/硅结构的传感器件，并且已经发现引入到传感器件的纳米间隙中的超纯水通过传感器件的电容和电导的变化来检测。通过将超纯水引入纳米间隙，电容和电导的变化的频率依赖性已经被证明。扫描电子显微镜对器件结构横截面的观察表明，制备了以二氧化硅薄膜作为间隔层的纳米间隙结构。对器件结构的傅里叶变换红外吸收测量表明，超纯水渗入纳米间隙。器件结构的近红外线透射测量表明，超纯水渗透通过纳米间隙，并且纳米间隙结构按照设计制造，因为硅对近红外线是透明的。实验结果表明，由于传感表面的疏水性，超纯水可以渗透到纳米间隙中。考察了敏感表面二氧化硅对纳米间隙中超纯水的敏感性的影响，找到了高灵敏度的条件，提出了电子响应水态的传感模型。

Sensing devices with a silicon/nano-gap/silicon structure using a silicon dioxide film as a spacer have been fabricated, and ultrapure water introduced into the nano-gap of the sensing device has been found to be detected by the change of capacitance and conductance for the sensing device. The frequency dependence of capacitance and conductance changes by introducing ultrapure water into the nano-gap has been demonstrated. Scanning electron microscope observation of the cross section of the device structure has shown that a nano-gap structure with a silicon dioxide film as a spacer was fabricated. Fourier transform infrared absorption measurements for the device structure have shown that ultrapure water penetrates into the nano-gap. Near-infrared ray transmission measurements for the device structure have shown that ultrapure water penetrates through the nano-gap and that the nano-gap structure was fabricated as designed, because silicon is transparent to near-infrared ray. It has confirmed that ultrapure water penetrates into the nano-gap because sensing surface is hydrophobic. The effect of silicon dioxide of sensing surface on sensing ultrapure water in the nano-gap has been examined and the condition of high sensitively has been found. We have proposed a sensing model of electron response through states of water.