MOST - Manufacturing and applications of GaN power semiconductor devices/modules

该项目是与台湾国家纳米器件实验室（NDL）和加拿大德纳公司（Dana）的联合研究合作，旨在为混合动力汽车和纯电动汽车（HEV和EV）设计和制造液体冷却氮化镓（GaN）功率模块。 GaN功率器件是一种新兴技术，由于其上级材料特性，其性能优于当前最先进的硅基功率MOSFET和绝缘栅双极晶体管（IGBT）。这些包括更高的临界场，更高的电子饱和速度，以及以二维电子气（2DEG）通道的形式的更高的迁移率。使GaN功率技术具有吸引力的一个重大突破是在大尺寸硅衬底上生长AlGaN/GaN层的低成本技术。进一步降低成本也有望在现有的硅铸造厂制造这些功率器件。GaN功率晶体管的主要应用是为HEV和EV实现紧凑高效的功率转换器。虽然宽带隙材料具有在高温环境中工作的额外能力，但功率转换器/传动系的热管理仍然是汽车行业的关键挑战。 本项目主要包括三个部分：高性能、高可靠性GaN功率晶体管的设计与制造;为GaN功率晶体管提供智能接口和驱动的集成电路（IC）的设计与实现（以及IGBT）;开发用于生产液体冷却GaN/IGBT功率模块的低成本制造工艺（多个功率晶体管、多个接口/驱动IC、电路板和铝冷却板的整体组件）。这项工作将使达纳能够生产关键的电力电子部件，用于组装紧凑，可靠和高效的功率转换器，用于混合动力汽车/电动汽车的电机驱动。

This project is a joint research collaboration with Taiwan's National Nano Device Laboratories (NDL) and Dana Canada Corp. (Dana) on the design and fabrication techniques for liquid cooled Gallium Nitride (GaN) power modules for Hybrid Electric and pure Electric Vehicles (HEVs and EVs). GaN power devices are an emerging technology that can outperform the current state-of-the-art silicon based power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) due to their superior material properties. These include higher critical field, higher electron saturation velocity, and higher mobility in the form of a 2-dimensional electron gas (2DEG) channel. A significant breakthrough that makes GaN power technology attractive is the low-cost technique to grow AlGaN/GaN layers on large size silicon substrates. Further cost-reduction is also promised by the potential to manufacture these power devices at established silicon foundries. The primary application for GaN power transistors is in the implementation of compact and high efficiency power converters for HEVs and EVs. While the wide bandgap material has the added ability to operate in high temperature environment, thermal management of the power converters/drive trains remains a critical challenge in the automotive industry. This project has three major components: the design and fabrication of high performance and reliable GaN power transistors; the design and implementation of integrated circuits (ICs) to provide intelligent interface and driving for the GaN power transistors (and also IGBTs); the development of low-cost manufacturing process for the production of liquid cooled GaN/IGBT power modules (an integral assembly of multiple power transistors, multiple interface/driving ICs, circuit board, and the aluminum cooling plate). This work will enable Dana to produce the critical power electronic parts for the assembly of compact, reliable and high efficiency power converters for the motor drive in HEVs/EVs.