Atomic Layer Deposition of Germanium-Antimony-Telluride

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This application for a research project aims on the development of an atomic layer deposition process for thin films consisting of germanium-antimony-telluride. The ternary alloy germanium-antimony-telluride is well suited to be applied in non-volatile phase change memories in semiconductor technology.Only halogen-free metalorganic germanium-, antimony and tellurium-compounds will be used, in order to rule out any later corrosion in electronic devices. Composition, structure and electrical properties of grown films will be investigated.Furthermore, phase change memories based on germanium-antimony-telluride will be fabricated and characterized with regard to the phase transitions amorphous/crystalline, crystalline/amorphous and the related Ohmic resistance values and energy pulses, as well as the long term stability.