Atomic Layer Deposition of Germanium-Antimony-Telluride

碲化锗锑的原子层沉积

• 批准号: 288136928
• 负责人: Professor Dr.-Ing. Edmund P. Burte
• 金额: --
• 依托单位: Technische Hochschule Wildau
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/288136928?language=en
• 关键词: Atomic; Layer; Deposition; Germanium; Antimony

This application for a research project aims on the development of an atomic layer deposition process for thin films consisting of germanium-antimony-telluride. The ternary alloy germanium-antimony-telluride is well suited to be applied in non-volatile phase change memories in semiconductor technology.Only halogen-free metalorganic germanium-, antimony and tellurium-compounds will be used, in order to rule out any later corrosion in electronic devices. Composition, structure and electrical properties of grown films will be investigated.Furthermore, phase change memories based on germanium-antimony-telluride will be fabricated and characterized with regard to the phase transitions amorphous/crystalline, crystalline/amorphous and the related Ohmic resistance values and energy pulses, as well as the long term stability.

本研究计划旨在发展碲化锗锑薄膜的原子层沉积制程。锗-锑-碲三元合金非常适合应用于半导体技术中的非易失性相变存储器。为了排除电子器件中的任何后续腐蚀，将仅使用无卤素的金属有机锗、锑和碲化合物。研究薄膜的组成、结构和电学性能，并制备基于锗-锑-碲化物的相变存储器，研究其非晶/晶、晶/非晶相变、欧姆电阻值和能量脉冲以及长期稳定性。

项目成果

Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5 (GST)

• DOI: 10.1002/zaac.201700211
• 发表时间: 2017-08
• 期刊: Zeitschrift für anorganische und allgemeine Chemie
• 作者: Nicole Harmgarth;Florian Zörner;Phil Liebing;E. Burte;M. Silinskas;F. Engelhardt;F. Edelmann

Structural Investigation of New Lithium Amidinates and Guanidinates

• DOI: 10.1002/zaac.201800486
• 发表时间: 2019-02
• 期刊: Zeitschrift für anorganische und allgemeine Chemie
• 作者: Phil Liebing;Nicole Harmgarth;V. Lorenz;Florian Zörner;L. Hilfert;Sabine Busse;F. Edelmann

Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds

锗锑碲化合物的等离子体辅助原子层沉积

• DOI: 10.1116/1.5003463
• 发表时间: 2018
• 期刊: Journal of Vacuum Science and Technology
• 作者: M. Silinskas;B. Kalkofen;R. Balasubramanian;A. Batmanov;E. P. Burte;N. Harmgarth;F. Zörner;F. T. Edelmann;B. Garke;M. Lisker
• 通讯作者: M. Lisker