Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features

这项研究计划是为了制备和研究横向受限原子精度的高质量电子系统的电学性质。我们将利用一种新的、很有前途的制造技术，即分子束外延(MBE)在含有先前由MBE生长的薄膜层的原位解理晶片的边缘上进行再生长。在这种技术中，横向结构(在解理表面上)的精度受到初始分子束外延生长的限制，因此，大约是原子尺寸。这比目前传统光刻技术所能达到的效果要好得多。我们建议制备新的系统，如横向共振隧穿结构和横向超晶格，并通过量子输运测量来研究它们的电子性质。

This research program is for the fabrication and study of the electronic properties of high-quality electron systems in GaAs/AlGaAs heterostructures which are laterally confined with atomic precision. We will make use of a new and promising fabrication technique, namely regrowth by molecular beam epitaxy (MBE) on the edge of an in-situ-cleaved wafer which contains thin-film layers previously grown by MBE. The precision of the lateral structures (on the cleaved surface) in this technique is limited by the initial MBE growth and, therefore, is about the atomic size. This is by far better than what is presently achievable by conventional lithography techniques. We propose to fabricate novel systems such as lateral resonant tunneling structures and lateral superlattices, and study their electronic properties through quantum transport measurements.