Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures

该奖项由普林斯顿大学的材料研究计划仪器提供，用于支持购买设备，以提高分子束外延（MBE）系统中生长的量子限制半导体结构的质量。该设备包括特殊的（全金属）闸阀和新的泻流细胞，将安装在分子束外延生长室。它将允许生长非常干净（低无序），选择性掺杂的GaAs/AlGaAs异质结结构，其中电子相互作用物理学占主导地位。MBE生长的高质量结构将用于正在进行的NSF支持的项目。这种结构为新的多体物理学提供了一个至关重要的实验平台。这些结果还可能对实现其制造和/或操作基于类似类型的半导体结构的新器件产生影响。改进后的材料将对几个合作者的研究产生积极影响，这些合作者从PI获得了高质量的GaAs/AlGaAs异质结构。这些设备将主要由学生使用，因此对他们的教育和培训至关重要。该奖项将加强融入前沿研究的高质量教育。此外，先进分层半导体结构的制造和物理学处于当今科学和技术的最前沿。该领域训练有素、受过良好教育的学生将成为美国和世界其他地区的宝贵资源。普林斯顿大学材料研究仪器计划颁发的这一奖项支持采购设备，以提高量子限制半导体结构的质量分子束外延（MBE）系统。该设备将改善极其清洁（低无序），选择性掺杂的GaAs/AlGaAs异质结结构的生长，其中电子相互作用物理学占主导地位。MBE生长的高质量结构将用于正在进行的NSF支持的项目。这种结构为新的多体物理学提供了一个至关重要的实验平台。这些结果还可能对实现其制造和/或操作基于类似类型的半导体结构的新器件产生影响。改进后的材料将对几个合作者的研究产生积极影响，这些合作者从PI获得了高质量的GaAs/AlGaAs异质结构。这些设备将主要由学生使用，因此对他们的教育和培训至关重要。该奖项将加强融入前沿研究的高质量教育。此外，先进分层半导体结构的制造和物理学处于当今科学和技术的最前沿。在这一领域受过良好训练和教育的学生将是美国和世界其他地区的宝贵资源。

This award from the Instrumentation for Materials Research program to Princeton University supports the acquisition of equipment to enhance the quality of quantum-confined semiconductor structures grown in a molecular beam epitaxy (MBE) system. The equipment includes special (all-metal) gate valves and new effusion cells which will be installed in the MBE growth chamber. It will allow the growth of extremely clean (low-disorder), selectively doped GaAs/AlGaAs heterojunction structures in which electron interaction physics dominates. The MBE grown, high-quality structures will be used in on-going NSF-supported projects. Such structures provide a crucial and important test-bed for new many-body physics. The results can also have an impact on the realization of new devices whose fabrication and/or operation is based on semiconductor structures of similar type. The improved material will impact positively the research of several collaborators who receive high-quality GaAs/AlGaAs heterostructures from the PI. The equipment will be used primarily by the students and will therefore be crucial for their education and training. The award will strengthen high quality education integrated into forefront research. In addition, fabrication and the physics of advanced layered semiconductor structures are at the forefront of today's science and technology. Well-trained and educated students in this field will be invaluable resources for the US as well as the rest of the world.This award from the Instrumentation for Materials Research program to Princeton University supports the acquisition of equipment to enhance the quality of quantum-confined semiconductor structures grown in a molecular beam epitaxy (MBE) system. The equipment will improve the growth of extremely clean (low-disorder), selectively doped GaAs/AlGaAs heterojunction structures in which electron interaction physics dominates. The MBE grown, high-quality structures will be used in on-going NSF-supported projects. Such structures provide a crucial and important test-bed for new many-body physics. The results can also have an impact on the realization of new devices whose fabrication and/or operation is based on semiconductor structures of similar type. The improved material will impact positively the research of several collaborators who receive high-quality GaAs/AlGaAs heterostructures from the PI. The equipment will be used primarily by the students and will therefore be crucial for their education and training. The award will strengthen high quality education integrated into forefront research. In addition, fabrication and the physics of advanced layered semiconductor structures are at the forefront of today's science and technology. Well-trained and educated students in this field will be invaluable resources for the US as well as the rest of the world.