High Performance Graphene-Based Devices

本研究的目的是利用新开发的特定位置冲压方法在各种衬底上沉积石墨烯和少层石墨烯，以制造高性能石墨烯基器件。该方法首先确定、设计和制造替代基板，以增强器件性能和功能。其次，利用特定位置的冲压方法，结合顶部栅极的原子层沉积，制备高性能石墨烯器件。第三，测量、分析直流器件特性、高频特性和其他器件参数，并将其与石墨烯层的物理特性进行关联。本研究集实验、理论和原子模型于一体。石墨烯内部的电子特性严重依赖于衬底，其中载流子输运受到散射和电子-声子相互作用的限制。但目前对衬底的选择主要局限于二氧化硅和碳化硅。这里使用的特定位置的冲压方法扩大了衬底的选择，不仅有潜力克服一些限制，而且还允许在石墨烯中进行载流子传输和带隙的工程。这对于实现高性能石墨烯电子器件至关重要。目前基于石墨烯的器件制造方法面临着基本的障碍：(i)不适合大规模制造，（ii）石墨烯放置缺乏位点特异性，以及（iii）对衬底的严重限制。特定位置的冲压方法有可能克服这些关键障碍，并为高性能石墨烯电子产品做出变革性贡献。本研究旨在提升课堂教学及外展经验。

The objective of this research is to use the newly developed method of site-specific stamping for depositing graphene and few-layers graphene on a wide variety of substrates in making high-performance graphene-based devices. The approach is to first identify, design, and fabricate alternate substrates for enhanced device performance and functionality. Second, high-performance graphene devices are fabricated using the site-specific stamping method, in conjunction with atomic layer deposition of top gates. Third, direct current device characteristics, high frequency properties, and other device parameters are measured, analyzed, and correlated to the physical properties of the graphene layers. This research integrates experiment, theory, and atomistic modeling. The electronic properties within the graphene critically depend on the substrate, where carrier transport is limited by scattering and electron-phonon interactions. But the current choice of the substrate is largely restricted to silica and silicon carbide. The site-specific stamping method used here expands the choice of substrates, and has the potential to not only overcome some of the limitations but also allow engineering of carrier transport and band gaps in graphene. This is critical for the realization of high-performance graphene-based electronic devices. Current methods for graphene-based devices fabrication suffer from fundamental barriers: (i) not amenable to large-scale fabrication, (ii) lack of site-specificity in graphene placement, and (iii) severe restriction on substrates. The site-specific stamping method has the potential to overcome these critical barriers, and to make transformative contributions to high-performance graphene-based electronics. This research is used in enhancing classroom teaching and outreach experiences.