MIP: 2D Crystal Consortium (MIP-2DCC)
MIP: 2D Crystal Consortium (MIP-2DCC)
批准号:
2039351
负责人:
Joan Redwing
金额:
$2010.0万
依托单位国家:
美国
项目类别:
Cooperative Agreement
财政年份:
2021
资助国家:
美国
项目状态:
未结题
起止时间:
2021-06-01 至 2026-05-31
中文摘要
非技术描述:二维晶体联盟(2DCC)是一个材料创新平台,是美国国家科学基金会材料研究部的中等规模基础设施项目,专注于推进二维材料的合成和表征。二维材料是原子薄层,由于受限制的电子和原子运动,具有三维中不存在的物理特性,并且具有从柔性电子到量子计算等革命性设备技术的潜力。要充分实现这一潜力,需要在原子水平上掌握晶圆级薄膜和具有高结晶完美度的体晶体的合成,并发现新的材料成分和结构。2DCC专注于通过开发最先进的实验和计算工具以及薄膜沉积和块状晶体生长技术来推进二维材料的合成科学,并支持先进的表征和处理。全设施范围的数据管理系统捕获和管理具有附加功能的样本数据,以实现数据支持研究的新模式。内部研究人员团队与外部用户合作,加速新材料的发现,开发大面积2D薄膜的合成工艺,向商业化过渡,并在国家用户设施内传播知识,样品,数据和技术,作为科学培训和交叉受精的中心。针对用户和更广泛的二维社区的外展和培训活动包括网络研讨会、二维材料年度研讨会、在线教程和数据科学研讨会。2DCC吸引了学术界、工业界和政府实验室各个职业阶段的材料研究界人士,包括少数民族院校或主要本科院校的学生和教师。现场培训机会的目标是发展下一代晶体种植者和工具开发人员,扩大在合成和高级表征方面的参与。技术描述:近几十年来,量子材料的发展导致了由降维、约束、拓扑和相互作用相互作用产生的突现现象的变革性发现。二维层状硫族化合物(2DLC)是这类材料的一个主要例子,包括范德华异质结、拓扑绝缘体、拓扑半金属和高温铁硫族化合物超导体。二维晶体联盟(2DCC)是NSF材料创新平台,其动力来自于二维晶体在新物理和高影响力技术方面的潜力,这些技术在合成过程中面临着重大挑战。该平台利用2DCC在分子束外延、金属有机化学气相沉积、约束异质外延、材料生长动力学和样品性质建模以及体晶体生长方面的内部专业知识。新的合成能力包括针对极端化学计量精度的双坩埚Bridgman方法,以及用于可扩展合成空气稳定的二维极性金属的集成等离子体/蒸发工具。该合成网与一套全面的先进光谱学,扫描探针和处理工具相互连接,允许样品交换,同时保持真空或惰性气体环境。整个设施生成的数据将输入到一个样本数据跟踪系统中,该系统嵌入了知识图谱功能,以实现数据支持材料发现的新模式。理论和计算工具部署在一个紧密集成的理论-计算-测量-合成循环中,目标是理解关键的动力学生长过程和原位和非原位表征的结果,遵循材料基因组计划的愿景。该奖项反映了美国国家科学基金会的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Non-Technical Description: The Two-Dimensional Crystal Consortium (2DCC) is a Materials Innovation Platform, an NSF mid-scale infrastructure program in the Division of Materials Research, that is focused on advancing the synthesis and characterization of 2D materials. 2D materials are atomically thin layers that, due to the restricted electron and atom motion, have physical characteristics that are not present in three dimensions and hold the potential for revolutionary device technologies ranging from flexible electronics to quantum computing. The full realization of this potential requires atomic-level mastery over the synthesis of wafer-scale films and bulk crystals with high crystalline perfection and also the discovery of new material compositions and structures. The 2DCC focuses on advancing the synthesis science of 2D materials through the development of state-of-the-art experimental and computational tools and techniques for thin film deposition and bulk crystal growth supported by advanced characterization and processing. A facility-wide data management system captures and curates sample data with additional functionality to enable new modes of data-enabled research. An in-house team of researchers works collaboratively with external users to accelerate discovery of new materials, to develop processes for synthesis of large area 2D films to transition toward commercialization, and to disseminate knowledge, samples, data, and techniques within a national user facility that acts as a hub for scientific training and cross-fertilization. Outreach and training activities targeted at users and the broader 2D community include webinars, an annual workshop on 2D materials, on-line tutorials and a data science workshop. The 2DCC engages the materials research community across academia, industry and government laboratories across career stages, including students and faculty at minority serving or primarily undergraduate institutions. On-site training opportunities are targeted at developing the next generation of crystal growers and tool developers and broadening participation in synthesis and advanced characterization.Technical Description: The development of quantum materials in recent decades has led to transformative discoveries of emergent phenomena resulting from the interplay of reduced dimensionality, confinement, topology, and interactions. Two-dimensional layered chalcogenides (2DLC) are a prime example of this class of materials, encompassing van der Waals heterojunctions, topological insulators, topological semimetals, and high-temperature Fe-chalcogenide superconductors. The 2D Crystal Consortium (2DCC), an NSF Materials Innovation Platform, is motivated by the potential of 2DLCs for new physics and high-impact technologies tempered by the significant challenges associated with their synthesis. The Platform exploits 2DCC in-house expertise in materials growth by molecular beam epitaxy, metalorganic chemical vapor deposition, confinement heteroepitaxy, modeling of materials growth kinetics and sample properties, and bulk crystal growth. New synthesis capabilities include double-crucible Bridgman methods that target extreme stoichiometric precision and an integrated plasma/evaporation tool for scalable synthesis of air-stable 2D polar metals. This synthesis web is interconnected with a comprehensive suite of advanced spectroscopy, scanning probe and processing tools allowing sample exchange while maintaining vacuum or inert-gas environments. Data generated throughout the facility feeds into a sample data tracking system that embeds knowledge graph functionality to enable new modes of data-enabled materials discovery. Theory and computational tools are deployed in a tightly integrated theory-computation-measurement-synthesis loop that targets the understanding of both key kinetic growth processes and the results of in situ and ex situ characterization, following the vision of the Materials Genome Initiative.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(44)
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Effect of Nitrogen Doping and Oxidation of Graphene on the Deposition of Platinum from Trimethyl(methylcyclopentadienyl)platinum(IV)
氮掺杂和石墨烯氧化对三甲基(甲基环戊二烯基)铂(IV)沉积铂的影响
DOI:
10.1021/acs.jpcc.2c04117
发表时间:
2022
期刊:
The Journal of Physical Chemistry C
影响因子:
--
作者:
[Campbell, Ian E., Nayir, Nadire, van Duin, Adri C., Mohney, Suzanne E.]
通讯作者:
Mohney, Suzanne E.
MOCVD of WSe2 crystals on highly crystalline single- and multi-layer CVD graphene
高结晶单层和多层 CVD 石墨烯上 WSe2 晶体的 MOCVD
DOI:
10.1016/j.carbon.2022.10.037
发表时间:
2023
期刊:
Carbon
影响因子:
10.9
作者:
[Huet, Benjamin, Bachu, Saiphaneendra, Alem, Nasim, Snyder, David W., Redwing, Joan M.]
通讯作者:
Redwing, Joan M.
DOI:
10.1038/s41524-022-00936-y
发表时间:
2022-11
期刊:
npj Computational Materials
影响因子:
9.7
作者:
[K. Momeni;Yanzhou Ji;Nadire Nayir;Nuruzzaman Sakib;Haoyue Zhu;Shiddartha Paul;T. Choudhury;Sara Ne]
通讯作者:
K. Momeni;Yanzhou Ji;Nadire Nayir;Nuruzzaman Sakib;Haoyue Zhu;Shiddartha Paul;T. Choudhury;Sara Ne
DOI:
10.1103/physrevb.106.l201112
发表时间:
2022-11
期刊:
Physical Review B
影响因子:
3.7
作者:
[Shreya Kumbhakar;Saurav Islam;Z. Mao;Yu Wang;A. Ghosh]
通讯作者:
Shreya Kumbhakar;Saurav Islam;Z. Mao;Yu Wang;A. Ghosh
DOI:
10.1116/6.0002013
发表时间:
2022
期刊:
Journal of Vacuum Science & Technology A
影响因子:
2.9
作者:
[Liu, Derrick S. H., Hilse, Maria, Engel-Herbert, Roman]
通讯作者:
Engel-Herbert, Roman
共 20 条
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
-
项目类别:Standard Grant
-
资助金额:$0.7万
-
财政年份:2023
-
负责人:Joan Redwing
-
依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
-
批准号:2138270
-
项目类别:Standard Grant
-
资助金额:$0.7万
-
财政年份:2021
-
负责人:Joan Redwing
-
依托单位:
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
-
批准号:2029729
-
项目类别:Standard Grant
-
资助金额:$6.54万
-
财政年份:2020
-
负责人:Joan Redwing
-
依托单位:
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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批准号:1917552
-
项目类别:Standard Grant
-
资助金额:$3.0万
-
财政年份:2019
-
负责人:Joan Redwing
-
依托单位:
Graphene Encapsulated Growth of 2D Materials
-
批准号:1808900
-
项目类别:Standard Grant
-
资助金额:$43.0万
-
财政年份:2018
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负责人:Joan Redwing
-
依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
-
财政年份:2017
-
负责人:Joan Redwing
-
依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
-
资助金额:$1778.76万
-
财政年份:2016
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负责人:Joan Redwing
-
依托单位:
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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批准号:1414236
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项目类别:Standard Grant
-
资助金额:$20.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
-
依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
-
财政年份:2014
-
负责人:Joan Redwing
-
依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
-
项目类别:Continuing Grant
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资助金额:$38.8万
-
财政年份:2010
-
负责人:Joan Redwing
-
依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
-
项目类别:Standard Grant
-
资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
-
资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
-
依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
Acquisition of an MOVPE System for Electronic Materials Research and Education
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批准号:0076312
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项目类别:Standard Grant
-
资助金额:$15.0万
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财政年份:2000
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
-
依托单位:
国内基金
海外基金
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新型两亲性铵盐基2D/3D钙钛矿异质结的构筑及光伏器件性能研究
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批准号:JCZRQNB202600886
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项目类别:省市级项目
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批准年份:2026
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基于“后刻蚀法”的2D锰铁基纳米酶设计及双通道多靶标联合扩增检测ALI机制研究
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批准号:2026JJ50123
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项目类别:省市级项目
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批准年份:2026
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负责人:吴生焘
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卟啉基2D MOF纳米片用于乏氧肿瘤的高
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批准号:
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项目类别:省市级项目
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资助金额:10.0万元
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批准年份:2025
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负责人:刘宇茸
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依托单位:
小立碗藓2D向3D发育转变的分子基础及作用机制研究
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批准号:JCZRQN202501035
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批准年份:2025
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基于深度学习与数字图像处理从2D微结构预测3D扩散迂曲度
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项目类别:省市级项目
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批准年份:2024
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负责人:陈孝君
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卟啉基2D/2D MOF/COF纳米片异质结的设计组装及其光催化CO2还原性能研究
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项目类别:青年科学基金项目
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批准年份:2024
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负责人:刘小琳
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基于功能化2D填料的PEO基聚合物电解质的构筑及锂负极/电解质界面研究
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批准年份:2024
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配体缺陷2D MOFs负载贵金属单原子表面微环境的精准调控及其电
催化醇氧化性能研究
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项目类别:省市级项目
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批准年份:2024
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负责人:金梦
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依托单位:
埃米级调控2D材料膜层间距构建多尺度限域空间及其催化降解有机微污染物效能和机理的研究
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批准号:
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项目类别:省市级项目
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资助金额:15.0万元
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批准年份:2024
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负责人:孟晨晨
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基于芳香铵盐功能化调控2D/3D异质结宽带隙钙钛矿光电性能研究
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