Development of an ultra-smooth polishing technique required for thediamond power device fabrication

点击翻译按钮获取中文摘要

To satisfy the demand for diamond substrates in power semiconductor device fabrication,we have developed a novel polishing method utilizing reactive species generated on Fecatalyst surface in hydrogen peroxide solution and applied the proposed technique toflatten a single-crystal diamond substrate. As a result, the whole area on the diamondsurface could be equally smoothed and an atomically smooth surface with an rmsroughness of 0.082 nm is obtained by our proposed method.