A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices

该项目旨在利用硅衬底上的金属/绝缘体/半导体超晶格构建由电子器件、光学器件和光电器件组成的高功能集成电路。为了实现这样的集成电路，我们成功地控制了CaF_2/CdF_2和Si/CaF_2超晶格的外延生长，这两种超晶格具有很高的能带偏移，产生显著的量子效应，适合于高功能器件。利用这些超晶格制备了共振隧穿器件和超短沟道肖特基源/漏MOSFET，并将其集成到共振隧穿器件中。对于外延生长及其在共振隧穿器件中的应用，我们采用离子束外延技术建立了外延生长条件，获得了负微分电阻峰谷比高达10^5的共振隧穿二极管。外延层的结晶质量进一步提高。 ...更多信息 通过SiO_2掩模在硅衬底上选择性地生长出几百纳米尺寸的窗口来改进。用这种方法在室温下获得了均匀性好、重复性好、峰谷比大的共振隧穿二极管，并用PtSi（p型）和ErSi_2（n型）材料制作了具有肖特基源漏的超短沟道MOSFET。室温下器件的沟道长度达到25nm。通过使用具有薄硅层的SOI衬底，示出了开/关比增加。作为一种适合与共振隧穿二极管集成的晶体管结构，制作了沟道宽度为8nm，沟道长度为50nm的垂直肖特基源/漏p-MOSFET，并在室温下实现了晶体管动作。通过这些结果，我们认为，高功能量子效应器件及其集成电路的基本元件的制造工艺和基本操作的硅衬底上建立。少

This project aimed at constructing high-functional integrated circuits composed of electron devices, optical devices, and opto-electronic devices utilizing metal/insulator/semiconductor superlattices on silicon substrates. In order to realize such integrated circuits, we achieved well controlled epitaxial growth of CaF_2/CdF_2 and Si/CaF_2 superlattices which are suitable for high-functional devices due to their very high band offsets resulting in remarkable quantum effects. We then fabricated resonant tunneling devices with these superlattices, and ultra-short channel Schottky source/drain MOSFETs to be integrated with the resonant tunneling devices.For the epitaxial growth and its application to resonant tunneling devices, we established the growth condition by using ionized beam epitaxial technique, and obtained resonant tunneling diodes with the peak-to-valley ratio of the negative differential resistance as high as 10^5. The crystalline quality of the epitaxial layers were further … More improved by a selective growth into windows with a few hundred nanometer size made on silicon substrate by SiO_2 masks. By this method resonant tunneling diodes with high uniformity, reproducibility, and large peak-to-valley ratio were obtained at room temperature.Ultra-short channel MOSFETs with Schottky sources and drains were fabricated with PtSi for p-type and ErSi_2 for n-type devices. Room-temperature operation of the devices with the channel length as short as 25nm was achieved. On/off ratio was shown to be increased by the use of SOI substrates with the thin silicon layers. As a transistor structure suitable for integration with the resonant tunneling diodes, vertical Schottky source/drain p-MOSFETs were fabricated, and transistor action was achieved at room temperature for the devices with channel width 8nm and channel length 50nm. By these results, we believe that fabrication process and fundamental operation of the basic elements for high-functional quantum-effect devices and their integrated circuits on silicon substrates were established. Less