Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System

在本课题研究中，为了实现低工作电压、低功耗的高速、大容量移动的通信系统，我们与德国高性能微电子技术创新研究所合作，从1999年开始，在三年计划的基础上，研制了一种以SiGe基MOS和HBT集成为主要技术的新型移动的通信系统芯片。在三年的最后一年，进行了SiGe的超小结构形成和超高速移动通信器件制造的研究。超小尺寸SiGe结构形成的研究包括实现掺杂SiGe（C）薄膜沉积的精确控制、实现超小尺寸SiGe（C）基半导体各向异性刻蚀的精确控制、实现CVD工艺中源气体分子吸附/反应常数的集成、实现原子层生长和原子层等离子体工艺数据库的开发 ...更多信息 重P掺杂半导体的氮化和原子有序氮掺杂控制。超高速器件制造技术的研究包括高度可控工艺技术的开发和研究、超大规模集成电路制造工艺的开发和研究、超高速器件结构的开发和研究以及对所制造器件的评价。通过这些研究，特别是选择性B掺杂SiGe外延形成的超自对准超浅结0.1 μ mMOSFET的CMOS适用性、SiGe沟道pMOSFET优良的低频噪声特性、100 GHz-HBT的器件制造工艺和结构、超低接触电阻的金属化技术、以及B或P掺杂SiGe（C）外延生长的精确控制。此外，开发了对器件应用极其重要的超小型SiGe（C）结构的高精度评估工艺。少

In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process … More , of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed. Less