A new fringe method for characterization of ROUGHNESS of inner layrs in semiconductor crystals and dielectric thin layrs

由于半导体器件内层和界面的“粗糙度”对半导体工艺有着重要的影响，提出了一种新的条纹法来表征半导体器件内层和界面的“粗糙度”。这里，条纹图案的亮度和清晰度或可见度由待测量物体的散射决定，因为组成条纹的点和斑点的大小和密度与位于界面或层上粗糙度处的颗粒和晶粒的大小和密度成比例，而它们的散射强度取决于基质和物体之间的折射率差。(1)SIMOX晶片通过适当的热处理从被大量但均匀的氧离子注入的硅晶片制备，并且因此在晶片中产生薄且平的氧化物层。该层由有效地充当光散射体的细氧化物颗粒制成。用SIMOX晶片得到的条纹图通常明亮清晰，有细小的圆点， ...更多信息 这告诉我们层是细氧化物颗粒的均匀集合体。(2)当在对晶片施加适当的热处理之后在CZ-Si晶片中产生用于本征吸杂（IG）的洁净区和氧化物颗粒时，通过该条纹方法清楚地观察到洁净区和IG区之间的界面。位于界面附近的氧化物颗粒的定量测量，这对晶片上的平面电路是非常重要的。(3)由于这种条纹图只有在衬底上生长的量子阱结构中存在光学不均匀性时才能观察到，因此用这种条纹法对量子阱结构多层膜的光学质量进行了全面的检测。(4)由于晶面上的蚀坑和台阶表示晶体学的各向异性，因此蚀坑和台阶散射的光强取决于入射光的方向与它们的晶体学取向，这在某些GaAs晶片上已清楚地观察到。为了测量以前条纹法无法测量的内层或界面的“粗糙度”，本文提出了一种新的方法，即：当然，是由电子系统控制的。少

A new fringe method was developed for characterization of "roughness" of inner layrs and interfaces in semiconductor devices because the roughness are very important for semiconductor technologies. Here, brightness and clearness, or visibility, of the fringe pattern are determined by scattering from the objects to be surveyed, because size and density of dots and spots which compose the fringes are proportional to size and density of particles and grains located at the interfaces or roughness on the layrs while their scattered intensities are dependent upon refractive index difference between matrix and the objects.(1) A SIMOX wafer is prepared by proper heat treatments from a silicon wafer showered by heavy but homogeneous implantation of oxygen ions, and thus a thin and flat oxide layr is generated in the wafer. The layr is made of fine oxide particles which efficiently act as light scatterers. The fringe patterns obtained by SIMOX wafers are usually bright and clear with fine dots w … More hich inform us the layr is a homogeneous assemble of fine oxide particles.(2) when denuded zone and oxide particles for intrinsic gettering (IG) are generated in a CZ-Si wafer after application of proper heat treatments to the wafer, an interface between the zone and the IG region is clearly observed by this fringe method. Oxide particles located near the interface are quantitatively measured, which is very important for planar circuits on the wafer.(3) Optical quality of multi-layrs with quantum well structure was comprehensively checked by this fringe method because this fringe pattern will be observed only when any optical inhomogeneity is present in the layrs grown on substrate.(4) Since etch pits and steps on crystal faces indicate crystallographic anisotropy, the light intensities scattered by the pits and steps are dependent upon the direction of incident light against their crystallographic orientations, which has been clearly observed by some GaAs wafers.To measure "roughness" of inner layrs or interfaces which are unable to measure before this fringe method, a new method has been developed here, which is, of course, governed by an electronic system. Less