Fabrication of ULSI highly Functional Thin Film employing High Rate and High Uniformity Digital CVD

本研究的目的是建立数字化CVD技术的ULSI薄膜，需要填充越来越高的纵横比间隙/孔和高性能。基本过程通过一个基本过程的原子级重复来进行，该基本过程首先是沉积前体的吸附，随后是膜质量的改善及其反应，例如与活性物质的氧化。首先，研究了多层Si氧化物/Si氮化物膜来填充层间绝缘膜以形成高深宽比间隙。为此，采用了无氧的TES（三乙基硅烷：Si（C_2H_5）H）。然后，利用氢原子与TES的反应，在深间隙中均匀地沉积了1 nm厚的有机硅膜，并通过氢原子的辐照，去除了硅膜中的氢键，大大改善了硅膜的质量。因此，成功地获得了具有2.5nm周期性的多层堆叠的氧化物/氮化物膜， ...更多信息 交替照射氧原子和氨自由基。该膜显示出高的耐电压性。其次，为了提高超大规模集成电路器件的高速性，研究了低介电常数薄膜的数字化CVD技术。低k的起源被认为是由少量的价电子产生的材料，因此研究了具有化学键如B-C-H，B-N，C-H和C-F的薄膜的沉积。SiOF膜的比介电常数ε为3.89，这是因为在氟化Si膜的氧化过程中F原子的释放。然而，氮化硼膜、由三乙基氯和枯烯制造的烃膜分别表现出ε =3和2.57。此外，氟碳膜的介电常数为1.89的低值。最后，针对目前数字化CVD方法制备时间长的缺点，本文研究了采用SiCl_2H_2/O_2的ICP（Inductively Coupled Plasma）氧化硅CVD方法，发现在无等离子体存在的情况下，前驱体与氧自由基反应沉积氧化硅。因此，在样品台附近布置另一ICP天线，并产生时间调制的Ar等离子体。因此，脉冲，即Ar^+离子的数字辐照实现了氧化物对高纵横比间隙的填充。少

The goal of this study was to establish the digital CVD technology of the ULSI thin films which required filling to increasingly high aspect ratio gap/hole and high performance. The basic process is carried out by the atomic level repetition of one fundamental process of first adsorption of the deposition precursor and subsequently improvement of the film quality and their reactions such as oxidation with active species. At first, the multi-layr Si oxide/Si nitride film was studied to fill a interlayr insulator film to the high aspect ratio gap. For the purpose, TES (triethylsilane : Si (C_2H_5) H) which did not oxygen was adopted. Then, the organic Si film with 1nm thickness was deposited confrmably in the deep gap by the reaction of hydrogen (H) atoms to TES.The great improvement of the Si film quality was found out by irradiation of H atoms, thereby removing H bonds in this Si film. Thus, a multi-layr, stacked oxide/nitride film with 2.5 nm periodicity was obtained successfully by a … More lternate irradiation of oxygen atoms and ammonia radicals. This film showed high voltage-resistance. Secondly, the digital CVD of the low dielectric constant (low-k) film was studied to improve the high-speed of the ULSI devices. The origin of the low-k was considered to arise from materials produced by small number of valence electrons, thus deposition of films with chemical bonds such as B-C-H,B-N,C-H and C-F was investigated. Specific dielectric constant, epsilon of the SiOF film was 3.89 of high value because of liberation of F atoms during oxidation of the fluorinated Si film. However, the boron nitride film, the hydrocarbon film fabricated from triethylchlorine and cumene, respectively demonstrated epsilon =3 and 2.57. Furthermore epsilon of the fluorocarbon film was low value of 1.89. Finally, since the present digital CVD method required long fabrication time, the Si oxide CVD employing the ICP (Inductively Coupled Plasma) with SiCl_2H_2/O_2 was studied to solve the drawback of the digital CVD.In this study, it was found that reaction of the precursor with oxygen radicals deposited the Si oxide in the absence of the plasma. Hence, another ICP antenna was arranged in vicinity of the sample stage and the time-modulated Ar plasma was generated. Accordingly, the pulse, namely digital irradiation of Ar^+ ions realized filling of the oxide to the high aspect ratio gap. Less