Atomic layer deposited dopant oxide films for doping of germanium and silicon-germanium substrates: Deposition – Flash Lamp Annealing – SIMS metrology

在拟议的研究项目框架内，将开发和分析氧化硼、氧化铟、氧化磷和氧化锑的原子层沉积过程。对于这些工艺，将使用锗和硅锗衬底。生长的层用作这些半导体材料的均匀掺杂的扩散源。所提出的工艺特别适用于三维表面的掺杂。用于掺杂实验的SiGe和Ge半导体薄膜将被外延生长。这些结构将被制备和分析，特别是关于稍后的掺杂剂分布和扩散过程的特征。掺杂的驱动和激活将通过闪光灯退火法进行，将进行广泛的研究和优化，以实现掺杂从原子层沉积的固体表面层扩散到SiGe和Ge中的目的。此外，二次离子质谱仪(SIMS)对于精确分析半导体材料中的掺杂浓度分布至关重要，因此将深入开展二次离子质谱仪(SIMS)领域的计量学研究。对具有高表面掺杂浓度的定向陡峭剖面的分析将在科学和技术上具有挑战性。

Within the frame of the proposed research project atomic layer deposition processes of boron oxide, indium oxide, phosphorus oxide, and antimony oxide will be developed and analysed. For these processes germanium and silicon germanium substrates will be used. The grown layers serve as diffusion sources for homogeneous doping of these semiconductor materials. The proposed process is especially useful for doping of three-dimensional surfaces. The SiGe and Ge semiconducting films that will be used for the doping experiments will be epitaxially grown. These structures will be prepared and analysed particularly with regard to the later characterisation of the dopant profiles and the diffusion processes. Drive-in and activation of the dopants will be carried out by flash lamp annealing, which will be extensively investigated and optimised for the purpose of dopant diffusion into SiGe and Ge from atomic layer deposited solid surface layers. Furthermore, metrology investigation in the field of secondary ion mass spectrometry (SIMS) will be carried out in-depth because of its vital importance for the precise analysis of the dopant concentration profiles in the semiconductor materials. The analysis of the aimed steep profiles with high surface concentration of dopants will be scientifically and technically challenging.