A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature

本研究旨在提出一种新的集成电路概念，将利用单电子/量子效应的新型功能器件与传统的在室温下工作的CMOS器件融合在一起。首先，研究了单电子晶体管的制备工艺。成功地获得了世界上最大的库仑阻塞振荡峰谷比和室温下的负微分电导。此外，首次在具有很小量子点的单空穴晶体管中实现了对库仑阻塞振荡峰位的精确控制。这种独特的特性源于量子点中巨大的量子能量间隔。接下来，对在室温下工作的单电子晶体管进行了集成。对工艺条件进行了微调，最终成功地集成了在室温下工作的单电子晶体管。此外，利用集成单电子晶体管的方法制作了模拟模式匹配电路，并在室温下演示了它们的工作原理。

This research aims at a new concept of integrate circuit in which new functional devices utilizing single-electron/quantum effect and conventional CMOS devices are merged operating at room temperature. At first, the fabrication process of single-electron transistors was developed. The world largest peak-to-valley current ratios of Coulomb blockade oscillations and negative differential conductance at room temperature were successfully obtained. Furthermore, the precise control of the peak position of the Coulomb blockade oscillations was achieved for the first time in single-hole transistors which have very small quantum dots. The unique characteristics originate from large quantum energy spacing in the quantum dot. Next, the integration of single-electron transistors operating at room temperature was pursued. The process conditions were finely tuned and finally, the single-electron transistors operating at room temperature were successfully integrated for the first time. Moreover, analog pattern matching circuits were fabricated by integrating single-electron transistors and their operations were demonstrated at room temperature.